Abstract:Four new lead(II) or bismuth(III) selenites and a tellurite, namely, Pb(3)(TeO(3))Cl(4), Pb(3)(SeO(3))(2)Br(2), Pb(2)Cd(3)(SeO(3))(4)I(2)(H(2)O), Pb(2)Ge(SeO(3))(4) and BiFe(SeO(3))(3), have been prepared and structurally characterized by single crystal X-ray diffraction (XRD) analyses. These compounds exhibit five different types of structures. The structure of Pb(3)(TeO(3))Cl(4) features a three-dimensional (3D) lead(II) chloride network with tellurite anions filling in the 1D tunnels of Pb(4) 4-member rings (MRs) along the c-axis. Pb(3)(SeO(3))(2)Br(2) contains a 3D network composed of lead(II) selenite layers interconnected by bromide anions. Pb(2)Cd(3)(SeO(3))(4)I(2)(H(2)O) is a 3D structure based on 2D cadmium(II) selenite layers which are further connected by 1D lead(II) iodide ladder chains with lattice water molecules located at the 1D tunnels of the structure. Pb(2)Ge(SeO(3))(4) features a 3D framework constructed by the alternate arrangement of lead(II) selenite layers and germanium(iv) selenite layers in the [100] direction. The structure of BiFe(SeO(3))(3) is built on the 3D anionic framework of ion(III) selenite with the bismuth(III) ions located at its Fe(6)Se(6) 12-MR tunnels. Pb(3)(TeO(3))Cl(4) (Pna2(1)) is polar and BiFe(SeO(3))(3) (P2(1)2(1)2(1)) is noncentrosymmetric. Powder second-harmonic generation (SHG) measurements using 1064 nm radiation indicate that BiFe(SeO(3))(3) exhibits a weak SHG efficiency of about 0.2 × KH(2)PO(4) (KDP). Magnetic property measurements for BiFe(SeO(3))(3) show a dominant antiferromagnetic interaction with weak spin-canting at low temperatures. IR, UV-vis and thermogravimetric, as well as electronic structure calculations were also performed.

Synthesis, Structure and Bonding, Optical Properties of Ba4MTrQ6 (m=cu, Ag; Tr=Ga, In; Q=S, Se)

Contribution Of Disulfide S-2(2-) Anions To The Crystal And Electronic Structures In Ternary Sulfides, Ba12in4s19, Ba4m2s8 (M = Ga, In)

Contribution of Disulfide S22– Anions to the Crystal and Electronic Structures in Ternary Sulfides, Ba12In4S19, Ba4M2S8 (M = Ga, In)

Synthesis, Structure, And Optical Properties Of Antiperovskite-Derived Ba(2)Mq(3)X (M = As, Sb; Q = S, Se; X = Cl, Br, I) Chalcohalides

Hydrazine-hydrothermal Syntheses, Characterizations and Photoelectrochemical Properties of Two Quaternary Chalcogenidoantimonates(iii) BaCuSbQ3 (Q = S, Se)

Hydrazine-Hydrothermal Synthesis and Characterization of the Two New Quaternary Thioantimonates(III) BaAgSbS3 and BaAgSbS3·H2O

Six New Members of the A(2)M(II)M(3)(IV)Q(8) Family and Their Structural Relationship

Syntheses, crystal structure, and photoelectric properties of two Zn-based chalcogenidoantimonates Zn–Sb–Q (Q = S, Se)

Syntheses, crystal structure, and photoelectric properties of two selenoantimonates A–Zn–Sb–Se (A = Rb and Cs)

Synthesis, characterization and theoretical investigation of a new chalcohalide, Ba 4 GaS 4 F 3

CRYSTAL STRUCTURE OF AgGa2Se3Cl(Br) COMPOUNDS

Syntheses, Crystal Structures and Properties of New Lead(ii) or Bismuth(iii) Selenites and Tellurite.

Rbcu1.2ag3.8se3 And Cscu2sb2se5: Novel Quaternary Intermetallics Synthesized From Superheated Organic Medial

Molecular Building Blocks for Solid-State Chalcogenides: Solvothermal Synthesis of [mn(en)3]te4and [Fe(en)3]2(sb2se5)

Syntheses, Crystal Structures, and Optical and Photocatalytic Properties of Four Small-Amine-Molecule-Directed M–Sn–Q (M = Zn, Ag; Q = S, Se) Compounds

Modular construction of A1+xM4-2xM'7+xSe15 (A = K, Rb; M = Pb, Sn; M' = Bi, Sb) : A new class of solid state quaternary thermoelectric compounds

Synthesis, Crystal Structure, and Optical Properties of Ba2SbO2SX (X = Br, I) Oxy-Chalcohalides

Synthesis, Crystal and Electronic Structures, and Physical Properties of Caged Ternary Cu-Rich Antimonide: BaCu7.31(3)Sb5

Synthesis and Characterization of Low-Dimensional Quaternary Sulfides of Thallium, Tl 2 Cu 2 GeS 4 , Tl 2 Ag 2 GeS 4 , and Tl 2 Ag 2 SnS 4

Cs2Ln3CuS8 (Ln = La-Nd, Sm-Tb): Synthesis, Crystal Structure, and Magnetic and Optical Properties

Syntheses, Crystal Structures, and Electronic Structures of Quaternary Group IV-Selenide Semiconductors