Note: Complementary Metal-Oxide-semiconductor High Voltage Pulse Generation Circuits.

Jiwei Sun,Pingshan Wang
DOI: https://doi.org/10.1063/1.4827077
2013-01-01
Abstract:We present two types of on-chip pulse generation circuits. The first is based on CMOS pulse-forming-lines (PFLs). It includes a four-stage charge pump, a four-stacked-MOSFET switch and a 5 mm long PFL. The circuit is implemented in a 0.13 μm CMOS process. Pulses of ∼1.8 V amplitude with ∼135 ps duration on a 50 Ω load are obtained. The obtained voltage is higher than 1.6 V, the rated operating voltage of the process. The second is a high-voltage Marx generator which also uses stacked MOSFETs as high voltage switches. The output voltage is 11.68 V, which is higher than the highest breakdown voltage (∼10 V) of the CMOS process. These results significantly extend high-voltage pulse generation capabilities of CMOS technologies.
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