Abstract:Photoluminescent defects in diamond, like the nitrogen-vacancy (NV) color center, are at the forefront of emerging optical quantum technologies. Most emit in the visible and near-infrared spectral region below 1000 nm (NIR-I), limiting their applications in photonics, fiber communications, and biology. Here, we show that the nitrogen-vacancy-nitrogen ($N_2V$) center, which emits in the visible and near-infrared-II (NIR-II, 1000-1700 nm), is ubiquitous in as-synthesized and processed nitrogen-doped diamond from bulk samples to nanoparticles. We demonstrate that $N_2V$ is also present in commercially available state-of-the-art NV diamond sensing chips made via chemical vapor deposition (CVD). In high-pressure high-temperature (HPHT) diamonds, the photoluminescence (PL) intensity of both $N_2V$ charge states, $N_2V^0$ in the visible and $N_2V^-$ in the NIR-II, increases with increasing substitutional nitrogen concentration. We determine the PL lifetime of $N_2V^-$ to be 0.3 ns and compare a quantum optical and density functional theory model of the $N_2V^-$ with experimental PL spectra. Finally, we show that detonation nanodiamonds (DND) show stable PL in the NIR-II, which we attribute to the $N_2V$ color center, and use this NIR-II PL to image DNDs inside skin cells. Our results will contribute to the scientific and technological exploration and development of the $N_2V$ color center and inspire more research into its effect on other color centers in diamond.

Fabrication of Nitrogen Vacancy Color Centers by Femtosecond Pulse Laser Illumination

Single Nitrogen Vacancy Color Centers Generated by Femtosecond Laser Illumination on Diamond

Deep Diamond Single-Photon Sources Prepared by a Femtosecond Laser.

Optically Coherent Nitrogen-Vacancy Centers in HPHT Treated Diamonds

Low-Charge-Noise Nitrogen-Vacancy Centers in Diamond Created Using Laser Writing with a Solid-Immersion Lens

Efficient Generation of Nitrogen Vacancy Centers by Laser Writing Close to the Diamond Surface with a Layer of Silicon Nanoballs

Narrow-linewidth diamond single-photon sources prepared via femtosecond laser

Transient Features of Graphitization and Nitrogen-Vacancy Color Centers in a Diamond Fabricated by Localization Femtosecond Laser Direct Writing

Fabrication and characterization of diamond nitrogen-vacancy center through argon ions etching

Generation of Nitrogen-Vacancy Centers in Diamond with Ion Implantation

Localized Nitrogen-Vacancy centers generated by low-repetition rate fs-laser pulses

Molecular Dynamics Simulation Study of Nitrogen Vacancy Color Centers Prepared by Carbon Ion Implantation into Diamond

Productivity of Concentration-Dependent Conversion of Substitutional Nitrogen Atoms into Nitrogen-Vacancy Quantum Emitters in Synthetic-Diamond by Ultrashort Laser Pulses

Engineered arrays of NV color centers in diamond based on implantation of CN- molecules through nanoapertures

Characterization of Milled High-Pressure High-Temperature NV-Center Nanodiamonds for Single-Photon Source Applications

Quenching nitrogen-vacancy center photoluminescence with infrared pulsed laser

Nanofabrication of Nitrogen-Vacancy Color Center

Single Color Centers Implanted in Diamond Nanostructures

Nanocone Structures Enhancing Nitrogen-Vacancy Center Emissions in Diamonds

Efficient fabrication of high-density ensembles of color centers via ion implantation on a hot diamond substrate

The $N_2V$ color center: a ubiquitous visible and near-infrared-II quantum emitter in nitrogen-doped diamond