Spectroscopic, Diode-Pumped Laser Properties and Gamma Irradiation Effect on Yb, Er, Ho:Gysgg Crystals

Jiakang Chen,Dunlu Sun,Jianqiao Luo,Jingzhong Xiao,Hongxiang Kang,Huili Zhang,Maojie Cheng,Qingli Zhang,Shaotang Yin
DOI: https://doi.org/10.1364/ol.38.001218
2013-01-01
Abstract:We demonstrate a diode end-pumped Yb, Er, Ho:Gd1.17Y1.83Sc2Ga3O12 (GYSGG) laser operated at 2.79 mu m in continuous-wave mode. Spectral analysis shows that Yb3+ and Ho3+ act as sensitizer and deactivator ions, respectively. Pumping with a 967 nm laser diode produces the maximum output power of 411 mW, corresponding to optical-optical conversion and slope efficiencies of 11.6% and 13.1%, respectively. The minimum laser threshold is only 81 mW because of Ho3+ doping. The laser properties are only slightly influenced by 100 mrad gamma irradiation. The Yb, Er, Ho:GYSGG crystal possesses excellent radiation resistance and is a potential laser gain medium in radiant environments. (C) 2013 Optical Society of America
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