Growth, Spectroscopic, and 2.7-Μm Q-switched Laser Properties of Cr,Er:YAP Crystal by Xenon-Lamp Pumping

Cong Quan,Dunlu Sun,Huili Zhang,Jianqiao Luo,Lunzhen Hu,Zhiyuan Han,Yang Qiao,Kunpeng Dong,Yuwei Chen,Maojie Cheng,Qingli Zhang
DOI: https://doi.org/10.1117/1.oe.61.11.116105
IF: 1.3
2022-01-01
Optical Engineering
Abstract:We demonstrate a high-peak-power and narrow pulse mid-infrared (MIR) laser with xenon-lamp pumping and La3Ga5SiO14 (LGS) Q-switching on the Cr,Er:YAP crystal grown by Czochralski method. X-ray powder diffraction and x-ray rocking curves suggest the crystal has high crystalline quality. Segregation coefficients of the Cr3+ and Er3+ in the as-grown Cr,Er:YAP crystal are 4.96 and 1.07, respectively. The absorption and fluorescence spectra indicate that the Cr,Er:YAP crystal is a promising material for MIR laser by xenon-lamp pumping. The fluorescence lifetimes of the upper (I(11/2)4) and lower (I(13/2)4) laser levels are 0.86 and 3.57 ms, respectively. A maximum energy of 632 mJ is acquired at 5 Hz by xenon lamp pumping. By the LGS electro-optic Q-switching technology, single pulse energy of 148.6 mJ is achieved at 5 Hz with a pulse width of 35.4 ns and peak power of 4.2 MW. The results show that the LGS Q-switched Cr,Er:YAP crystal pumped by xenon lamp possesses potential application as a short-pulse and high-energy laser device.
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