Abstract:An electrolyte‐gated synaptic transistor based on an ultra‐thin epitaxial La0.7Sr0.3MnO3 film is presented. Multi‐level nonvolatile resistance states can be obtained in an analogue and reversible manner through the dynamic control of oxygen composition of the manganite film via voltage pulses applied through the gate terminal. The coexistence of electrostatic and electrochemical effects allows the reproduction of important synaptic features related to short‐term and long‐term memory and plasticity. Developing electronic devices capable of reproducing synaptic functionality is essential in the context of implementing fast, low‐energy consumption neuromorphic computing systems. Hybrid ionic/electronic three‐terminal synaptic transistors are promising as efficient artificial synapses since they can process information and learn simultaneously. In this work, an electrolyte‐gated synaptic transistor is reported based on an ultra‐thin epitaxial La0.7Sr0.3MnO3 (LSMO) film, a half‐metallic system close to a metal‐insulator transition. The dynamic control of oxygen composition of the manganite ultra‐thin film with voltage pulses applied through the gate terminal allows reversible modulation of its electronic properties in a non‐volatile manner. The conductance modulation can be finely tuned with the amplitude, duration, and number of gating pulses, providing different alternatives to gradually update the synaptic weights. The transistor implements essential synaptic features such as excitatory postsynaptic potential, paired‐pulse facilitation, long‐term potentiation/depression of synaptic weights, and spike‐time‐dependent plasticity. These results constitute an important step toward the development of neuromorphic computing devices leveraging the tunable electronic properties of correlated oxides, and pave the way toward enhancing future device functionalities by exploiting the magnetic (spin) degree of freedom of the half metallic transistor channel.

Strain-mediated phase control and electrolyte-gating of electron-doped manganites.

Electrostatic-doping-controlled phase separation in electron-doped manganites

Electronic Transport of the Manganite-Based Heterojunction with High Carrier Concentrations

Electrically Controlled Reversible Strain Modulation in MoS$_2$ Field-effect Transistors via an Electro-mechanically Coupled Piezoelectric Thin Film

Manipulating the metal-to-insulator transition and magnetic properties in manganite thin films via epitaxial strain

Strain-Based Room-Temperature Non-Volatile MoTe$_2$ Ferroelectric Phase Change Transistor

Cooperative photoinduced metastable phase control in strained manganite films

Electrical manipulation of orbital occupancy and magnetic anisotropy in manganites

Electrically Controlled High Sensitivity Strain Modulation in MoS2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates

Proton‐Mediated Phase Control in Flexible and Transparent Mott Transistors

The Coupling of Local Strain and K + ‐Ion Release Induced Phase Transition Heterogeneity in Tunnel MnO 2

Theoretical Study of Magnetic Phase Transition in La23M13

Reversible Ferromagnetic Phase Transition in Electrode‐Gated Manganites

Strain-induced magnetization control in an oxide multiferroic heterostructure

Two-phase behavior in strained thin films of hole-doped manganites

Hidden Metal-Insulator Transition in Manganites Synthesized Via a Controllable Oxidation

Strain-Controllable Phase and Magnetism Transitions in Re-Doped MoTe2 Monolayer

Electrophoretic-like Gating Used to Control Metal-Insulator Transitions in Electronically Phase Separated Manganite Wires.

Strain Control of Phase Transition and Magnetocaloric Effect in Nd0.5Sr0.5MnO3 Thin Films

Electrolyte Gated Synaptic Transistor based on an Ultra‐Thin Film of La0.7Sr0.3MnO3

Tuning the Phase Separation, Charge Ordering, and Electronic Transport in Electron‐Doped Manganite Films by Piezo‐Strain and Magnetic Field