Effect of Hopping Between Oxygen Atoms on the Metal-Insulator Transition in CuO2 Planes of High-Tc Superconductors.

WY ZHANG,M AVIGNON,KH BENNEMANN
DOI: https://doi.org/10.1103/physrevb.43.11426
1991-01-01
Abstract:Using the slave-boson technique developed by Kotliar and Ruckenstein, we studied the metal-insulator transition in the antiferromagnetic ground state of high-T(c) superconducting oxides. The Hubbard Hamiltonian used for the calculations includes hopping between oxygen atoms as well as Cu-O hopping. It is shown that hopping between oxygen atoms is particularly important for this metal-insulator transition. In the absence of this hopping, the transition to the insulating phase occurs already for infinitesimally small on-site Coulomb repulsion. Results for the phase diagram in the (U, DELTA) plane for three typical values of oxygen-oxygen hopping are given. Our results are compared with the ones obtained for the paramagnetic state. In agreement with experiment, we obtain a transition from an antiferromagnetic insulating state to a metallic state as function of doping.
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