On the Doping Induced Gap States of High-Tc Oxides Due to Oxygen Disorder

WY ZHANG,KH BENNEMANN
DOI: https://doi.org/10.1016/0375-9601(94)91054-5
IF: 2.707
1994-01-01
Physics Letters A
Abstract:The photoemission and inverse photoemission spectra clearly show doping induced states inside the antiferromagnetic gap of high-Tc superconducting oxides. Experimental data indicate that these states have dominant oxygen character and result from the transfer of density of states from the lower and upper Hubbard bands. They also seem to be related to localized orbitals. It is important to determine the physical nature of these states and whether these states in the gap result solely from strong correlations or from a combination of strong correlation and oxygen disorder. We show in this paper that structural defects like excess oxygen and oxygen vacancies in the CuO2 plane will cause deep impurity states in the gap and which have approximately the observed characteristics. Furthermore, we find that copper disorder does not cause such states in the gap. Despite its simplicity these results are interesting with regard to clarifying the physical origin of these states.
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