Abstract:Synthesis of device-quality GeSn materials with higher Sn compositions is hindered by various factors, such as Sn segregation, clustering, and short-range ordering effects. In the present work, the impact of the clustering of Sn atoms in a GeSn semiconductor alloy was studied by density functional theory using SG15 pseudopotentials in a Synopsys QuantumATK tool, where the thermodynamic stability, effective band structure, indirect and direct bandgaps, and density of states (DOS) were computed to highlight the difference between a cluster-free random GeSn alloy and a GeSn alloy with Sn–Sn clusters. A 54-atom bulk Ge1–xSnx (x = 3.71%–27.77%) supercell was constructed with cluster-free and a first nearest neighbor Sn–Sn clustered GeSn alloy at each composition for this work. Computation using the generalized gradient approximation exchange-correlation functional showed that the thermodynamic stability of GeSn was reduced due to the clustering of Sn, which increased the formation energy of the GeSn alloys by increasing the Hartree potential energy and exchange-correlation energy. Moreover, with the effective band structure of the GeSn material at a Sn composition of ∼22%, both direct (Eg,Γ) and indirect (Eg,L) bandgaps decreased by a large margin of 40.76 and 120.17 meV, respectively, due to Sn–Sn clustering. On the other hand, Eg,Γ and Eg,L decrease is limited to 0.5 and 12.8 meV, respectively, for Sn composition of ∼5.6%. Similar impacts were observed on DOS, in an independent computation without deducing from the electronic band structure, where the width of the forbidden band reduces due to the clustering of Sn atoms in GeSn. Moreover, using the energy bandgaps of GeSn computed with the assumption of it being a random alloy having well-dispersed Sn atoms needs revision by incorporating clustering to align with the experimentally determined bandgap. This necessitates incorporating the effect of Sn atoms clustered together at varying distributions based on experimental characterization techniques such as atom probe tomography or extended x-ray absorption fine structure to substantiate the energy bandgap of the GeSn alloy at a particular composition with precision. Hence, considering the effect of Sn clusters during material characterization, beginning with the accurate energy bandgap characterization of GeSn would help in mitigating the effect of process variations on the performance characteristics of GeSn-based group IV electronic and photonic devices such as varying leakage currents in transistors and photodiodes as well as the deviation from the targeted wavelength of operation in lasers and photodetectors.

Phase Selection And Site-Selective Distribution By Tin And Sulfur In Supertetrahedral Zinc Gallium Selenides

Role of tin clustering in band structure and thermodynamic stability of GeSn by atomistic modeling

Spacing Dependent and Doping Independent Superconductivity in Intercalated 1T Two Dimensional SnSe2

Spacing Dependent and Cation Doping Independent Superconductivity in Intercalated 1T 2D SnSe2

Controlled Doping of Wafer‐Scale PtSe2 Films for Device Application

Substitutional Doped GeSe: Tunable Oxidative States with Strain Engineering

Janus Doping of Sulfur into Platinum Diselenide Ribbons

Doping engineering of monolayer MSe (M = Ga, In) by high-throughput first-principles calculations

Topology selectivity of a conformationally flexible precursor through selenium doping

Valence-Regulated Metal Doping of Mixed-Halide Perovskites to Modulate Phase Segregation and Solar Cell Performance

Heterovalent Substitution to Enrich Electrical Conductivity in Cu2CdSn1-xGaxSe4 Series for High Thermoelectric Performances

Tuning ferroelectricity by charge doping in two-dimensional SnSe

Modulating p-type doping of two dimensional material palladium diselenide

Study on the Effect of Sn, In, and Se Co-Doping on the Thermoelectric Properties of GeTe

Chemical Trend of Transition-Metal Doping in WSe2

The effect of tin doping on the band structure and optical properties of polycrystalline antimony selenide

Influence of Group-IVA Doping on Electronic and Optical Properties of ZnS Monolayer: A First-Principles Study

Synergistic Optimization of Thermoelectric Performance in SnSe2 through co-doping: Anionic Vacancy Formation and Band Engineering

Spatially controlled doping of two-dimensional SnS 2 through intercalation for electronics

Dopant segregation analysis on Sb:SnO2 nanocrystals

Inhibition of Phase Segregation in Cesium Lead Mixed-Halide Perovskites by B-Site Doping