Abstract:Superconductivity in few-layer semiconducting transition metal dichalcogenides (TMDs) can be induced by field-effect doping through ionic-liquid gating. While several experimental observations have been collected over the years, a fully-consistent theoretical picture is still missing. Here we develop a realistic framework that combines the predictive power of first-principles simulations with the versatility and insight of Bardeen-Cooper-Schrieffer gap equations to rationalize such experiments. The multi-valley nature of semiconducting TMDs is taken into account, together with the doping- and momentum-dependent electron-phonon and Coulomb interactions. Consistently with experiments, we find that superconductivity occurs when the electron density is large enough that the Q valleys get occupied, as a result of a large enhancement of electron-phonon interactions. Despite being phonon-driven, the superconducting state is predicted to be sensitive to Coulomb interactions, which can lead to the appearance of a relative sign difference between valleys and thus to a $s_{+-}$ character. We discuss qualitatively how such scenario may account for many of the observed physical phenomena for which no microscopic explanation has been found so far, including in particular the presence of a large subgap density of states, and the sample-dependent dome-shaped dependence of $T_c$ on accumulated electron density. Our results provide a comprehensive analysis of gate-induced superconductivity in semiconducting TMDs, and introduce an approach that will likely be valuable for other multivalley electronic systems, in which superconductivity occurs at relatively low electron density.

Spacing Dependent and Cation Doping Independent Superconductivity in Intercalated 1T 2D SnSe2

Spacing Dependent and Doping Independent Superconductivity in Intercalated 1T Two Dimensional SnSe2

Modulation of electronic state in copper-intercalated 1T-TaS 2

Induced anisotropic superconductivity in ionic liquid cation intercalated 1T-SnSe 2

Induced Anisotropic Superconductivity in Ionic Liquid Cation Intercalated 1T-Snse2

Quasi-two-dimensional Superconductivity in SnSe2 Via Organic Ion Intercalation

Multiple-Intercalation Stages and Universal Tc Enhancement Through Polar Organic Species in Electron-Doped 1T-Snse2

Superconductivity and Disorder Effect in TlNi2Se2−xSxcompounds

Gate-Induced Interfacial Superconductivity in 1T-Snse2.

The Unusual Suppression of Superconducting Transition Temperature in Double-Doping 2H-Nbse2

The Unusual Suppression of Superconducting Transition Temperature in Double-Doping 2H-NbSe$_2$

Metal-insulator transition in organic ion intercalated VSe<sub>2</sub> induced by dimensional crossover

Unveiling the Electronic Inhomogeneity and Pseudogap in Transition Metal Dichalcogenide 1T-Tise2

Intrinsic and Doping-Enhanced Superconductivity in Monolayer 1h−tas2 : Critical Role of Charge Ordering and Spin-Orbit Coupling

Intercalation-Induced Monolayer Behavior in Bulk NbSe2

Ion Intercalation Engineering of Electronic Properties of Two-Dimensional Crystals of 2H−tase2

Superconducting Properties and Topological Nodal Lines Features in Centrosymmetric Sn0.5TaSe2

Tunable Electronic Structures and Half-Metallicity in Two-Dimensional InSe Functionalized with Magnetic Superatom.

Unconventional gate-induced superconductivity in transition-metal dichalcogenides

Spatially controlled doping of two-dimensional SnS 2 through intercalation for electronics