Coverage-Dependent Stability of Ru xSi y on Ru(0001): A Comparative DFT and XPS Study
Jonathon Cottom,Stefan van Vliet,Jorg Meyer,Roland Bliem,Emilia Olsson
DOI: https://doi.org/10.1039/d4cp04069d
IF: 3.3
2024-11-22
Physical Chemistry Chemical Physics
Abstract:This work investigates the interaction of silicon with ruthenium, extending from Si-defect centers in ruthenium bulk to the adsorption of Si on the Ru(0001) surface. Using density functional theory (DFT) we calculate the interaction energies of up to 2 monolayers (MLs) of Si with this surface, uncovering the initial formation of ruthenium silicide (Ru x Si y ). Our results demonstrate that Si readily forms substitutional defects (Si Ru ) in bulk ruthenium. These defects are further stabilized on the Ru(0001) surface, resulting in a distinct propensity for forming Ru–Si Ru mixed layers – which can thus be described by stoichiometry Ru x Si y . Overlayers of surface-adsorbed Si adatoms and Ru x Si y mixed layers are iso-energetic at 0.5 ML, with the latter becoming increasingly energetically favored at higher Si coverages. We further examine the influence of Ru x Si y formation with respect to oxide formation, focusing on coverage-dependent energy differences. Our results show Ru x Si y layers are energetically favored with respect to the forming oxide for silicon and oxygen coverages above 1.1 ML, respectively. In addition, the formation of Ru x Si y and the subsequent oxidation of Ru and Ru x Si y were also investigated experimentally using in situ XPS. This confirmed the DFT prediction, with negligible oxide formation on the Ru x Si y sample, whereas the unprotected Ru surface showed extensive RuO 2 formation under the same conditions. Our study not only enhances the understanding of Ru surface chemistry but also suggests a straightforward computational approach for screening the oxidation resistance of surface coatings.
chemistry, physical,physics, atomic, molecular & chemical