Abstract:The effect of dislocations on the chemical, electrical and transport properties in oxide materials is important for electrochemical devices, such as fuel cells and resistive switches, but these effects have remained largely unexplored at the atomic level. In this work, by using large-scale atomistic simulations, we uncover how a < 100 >{011} edge dislocation in SrTiO3, a prototypical perovskite oxide, impacts the local defect chemistry and oxide ion transport. We find that, in the dilute limit, oxygen vacancy formation energy in SrTiO3 is lower at sites close to the dislocation core, by as much as 2 eV compared to that in the bulk. We show that the formation of a space-charge zone based on the redistribution of charged oxygen vacancies can be captured quantitatively at atomistic level by mapping the vacancy formation energies around the dislocation. Oxide-ion diffusion was studied for a low vacancy concentration regime (ppm level) and a high vacancy concentration regime (up to 2.5%). In both cases, no evidence of pipe-diffusion, i.e., significantly enhanced mobility of oxide ions, was found as determined from the calculated migration barriers, contrary to the case in metals. However, in the low vacancy concentration regime, the vacancy accumulation at the dislocation core gives rise to a higher diffusion coefficient, even though the oxide-ion mobility itself is lower than that in the bulk. Our findings have important implications for applications of perovskite oxides for information and energy technologies. The observed lower oxygen vacancy formation energy at the dislocation core provides a quantitative and direct explanation for the electronic conductivity of dislocations in SrTiO3 and related oxides studied for red-ox based resistive switching. Reducibility and electronic transport at dislocations can also be quantitatively engineered into active materials for fuel cells, catalysis, and electronics.

Atomic-Scale Analysis of the Oxygen Configuration at A Srtio3 Dislocation Core

Atomic-scale Structure Relaxation, Chemistry and Charge Distribution of Dislocation Cores in SrTiO3.

Atomic Origin of Ti Deficient Dislocation in SrTiO3 Bicrystal and Their Electronic Structures

Atomic Origin of Ti-deficient Dislocation in SrTiO3 Bicrystals and Their Electronic Structures

Oxygen Vacancy Migration along Dislocations in SrTiO3 Studied by Cathodoluminescence

Spontaneous symmetry breaking of dislocation core in SrTiO3

Combined theoretical and experimental study of the Moiré dislocation network at the SrTiO$_3$-(La,Sr)(Al,Ta)O$_3$ interface

Atomic scale characterization of oxygen vacancy segregation at SrTiO3 grain boundaries

Atomic-Resolution Measurement of Oxygen Concentration in Oxide Materials

Dislocations In Srtio3: Easy To Reduce But Not So Fast For Oxygen Transport

The chemical bond and atomic displacements in SrTiO3 from X‐ray diffraction analysis

Atomic-scale imaging of nanoengineered oxygen vacancy profiles in SrTiO3

Atomic-resolution imaging of electrically induced oxygen vacancy migration and phase transformation in SrCoO2.5-σ

Conceptual Framework for Dislocation-Modified Conductivity in Oxide Ceramics Deconvoluting Mesoscopic Structure, Core, and Space Charge Exemplified for SrTiO 3

Dislocation-related Surface-Layer Effect in SrTiO3 Single Crystals

Atomic-resolution study of oxygen vacancy ordering in $La_{0.5}$$Sr_{0.5}$Co$O_{3-δ}$ thin films on SrTi$O_{3}$ during in-situ cooling experiments

Direct Observation of Oxygen Atoms Taking Tetrahedral Interstitial Sites in Medium-Entropy Body-Centered-Cubic Solutions

Interactions between Oxygen Interstitial and <a>-Type Screw Dislocations in alpha-Titanium

Titanium enrichment and strontium depletion near edge dislocation in strontium titanate [001]/(110) low-angle tilt grain boundary

Atomic-Scale Measurement of Flexoelectric Polarization at SrTiO_{3} Dislocations.

Oxygen-dislocation interaction in titanium from first principles