Design for Increased Defect Tolerance in Metamorphic GaAsP-on-Si Top Cells
Tal Kasher,Lauren M. Kaliszewski,Daniel L. Lepkowski,Jacob T. Boyer,Marzieh Baan,Tyler J. Grassman,Steven A. Ringel
DOI: https://doi.org/10.1109/jphotov.2024.3463974
2024-10-29
IEEE Journal of Photovoltaics
Abstract:To date, the greatest performance limiter in monolithic III-V/Si tandem (multijunction) solar cells, like GaAs P /Si, is excess threading dislocation densities (TDD) resulting from the lattice-mismatched heteroepitaxy. Recent developments in low-TDD GaAsyP1-y/Si metamorphic buffers were used to grow standalone GaAs P top cells on Si with a TDD of 4 × 106 cm−2, ∼2.5 × lower than previous iterations, greatly improving the potential for the production of high-efficiency tandems based on this platform. Nonetheless, these reduced-TDD cells were still found to possess considerable voltage-dependent carrier collection (VDC) losses. As such, to improve JSC and fill factor, without sacrificial reduction in VOC, a doping gradient within the cell base layer was designed and implemented. The updated design reduces VDC losses to levels that would otherwise require further TDD reduction by at least another 2.5 × (to ≤ 1.5 × 106 cm−2) in a typical flat doping profile design. Replacing the p+-Ga In P back surface field with p+-Al Ga As P provided an additional improvement in both VOC and JSC, yielding device performance equivalent to a 4 × TDD reduction in the previous design. The culmination of these design changes results in a new subcell that outperforms our previous best top cell by ∼4.3% absolute AM1.5G efficiency, with increases in fill factor, JSC, and WOC of about 3.3% absolute, 1.9 mA/cm2, and 0.12 V, respectively. This new design, coupled with the reduced TDD platform, paves a promising path toward the development of higher efficiency GaAs P /Si tandems upon full device integration.
energy & fuels,materials science, multidisciplinary,physics, applied