Abstract:As the minimum fabrication technology of CMOS transistor shrink down to 90nm or below, the high standby power has become one of the major critical issues for the SRAM-based FPGA circuit due to the increasing leakage currents in the configuration memory. The integration of MRAM in FPGA instead of SRAM is one of the most promising solutions to overcome this issue, because its nonvolatility and high write/read speed allow to power down completely the logic blocks in “idle” states in the FPGA circuit. MRAM-based FPGA promises as well as some advanced reconfiguration methods such as runtime reconfiguration and multicontext configuration. However, the conventional MRAM technology based on field-induced magnetic switching (FIMS) writing approach consumes very high power, large circuit surface and produces high disturbance between memory cells. These drawbacks prevent FIMS-MRAM's further development in memory and logic circuit. Spin transfer torque (STT)-based MRAM is then evaluated to address these issues, some design techniques and novel computing architecture for FPGA logic circuits based on STT-MRAM technology are presented in this article. By using STMicroelectronics CMOS 90nm technology and a STT-MTJ spice model, some chip characteristic results as the programming latency and power have been calculated and simulated to demonstrate the expected performance of STT-MRAM based FPGA logic circuits.

Low Power Magnetic Full-Adder Based on Spin Transfer Torque MRAM

High-Frequency Low-Power Magnetic Full-Adder Based on Magnetic Tunnel Junction with Spin-Hall Assistance

Design of an Process In-Memory Full Adder Based on Voltage-Controlled Spin Orbit Torque Magnetic Random Access Memory

A High-Reliability, Low-Power Magnetic Full Adder

Magnetic Adder Based on Racetrack Memory

Robust magnetic full-adder with voltage sensing 2T/2MTJ cell

A Low Power and High Sensing Margin Non-Volatile Full Adder Using Racetrack Memory

Spin transfer torque (STT)-MRAM--based runtime reconfiguration FPGA circuit

Ultra Low Power Magnetic Flip-Flop Based on Checkpointing/Power Gating and Self-Enable Mechanisms

Low Power In-Memory Computing Based On Dual-Mode Sot-Mram

A 16 Kb Spin-Transfer Torque Random Access Memory with Self-Enable Switching and Precharge Sensing Schemes

Parallel-Prefix Adder in Spin-Orbit Torque Magnetic RAM for High Bit-Width Non-Volatile Computation

Magnonic spin-transfer torque MRAM with low power, high speed, and error-free switching

Synchronous 8-Bit Non-Volatile Full-Adder Based on Spin Transfer Torque Magnetic Tunnel Junction

Design of an Area-Efficient Computing in Memory Platform Based on STT-MRAM

Multi-bit nonvolatile flip-flop based on NAND-like spin transfer torque MRAM

Advanced Low Power Spintronic Memories Beyond STT-MRAM

Emerging Hybrid Logic Circuits Based on Non-Volatile Magnetic Memories.

Low power magnetic flip-flop based on checkpointing and self-enable mechanism

A Novel In-MRAM Multiplier Using Toggle Spin Torques Switching

Write-Efficient STT/SOT Hybrid Triple-Level Cell for High-Density MRAM