Abstract:Pseudo-one dimensional (pseudo-1D) materials are a new-class of materials where atoms are arranged in chain like structures in two-dimensions (2D). Examples include recently discovered black phosphorus, ReS2 and ReSe2 from transition metal dichalcogenides, TiS3 and ZrS3 from transition metal trichalcogenides and most recently GaTe. The presence of structural anisotropy impacts their physical properties and leads to direction dependent light-matter interactions, dichroic optical responses, high mobility channels, and anisotropic thermal conduction. Despite the numerous reports on the vapor phase growth of isotropic TMDCs and post transition metal chalcogenides such as MoS2 and GaSe, the synthesis of pseudo-1D materials is particularly difficult due to the anisotropy in interfacial energy, which stabilizes dendritic growth rather than single crystalline growth with well-defined orientation. The growth of monoclinic GaTe has been demonstrated on flexible mica substrates with superior photodetecting performance. In this work, we demonstrate that pseudo-1D monoclinic GaTe layers can be synthesized on a variety of other substrates including GaAs (111), Si (111) and c-cut sapphire by physical vapor transport techniques. High resolution transmission electron microscopy (HRTEM) measurements, together with angle resolved micro-PL and micro-Raman techniques, provide for the very first time atomic scale resolution experiments on pseudo-1D structures in monoclinic GaTe and anisotropic properties. Interestingly, GaTe nanomaterials grown on sapphire exhibit highly efficient and narrow localized emission peaks below the band gap energy, which are found to be related to select types of line and point defects as evidenced by PL and Raman mapping scans. It makes the samples grown on sapphire more prominent than those grown on GaAs and Si, which demonstrate more regular properties.

Synthesis of one-dimensional (1D) Ge-based ternary oxide nanostructures

Vapor phase growth and photoluminescence of oriented-attachment Zn2GeO4 nanorods array

Space-confined and Substrate-Directed Synthesis of Transition-Metal Dichalcogenide Nanostructures with Tunable Dimensionality.

Synthesis and Structure Characterization of Ternary Zn<sub>2</sub>GeO<sub>4</sub>Nanowires by Chemical Vapor Transport

Synthesis And Structure Characterization Of Ternary Zn2geo4 Nanowires By Chemical Vapor Transport

Catalytic Growth of Germanium Oxide Nanowires, Nanotubes, and Germanium Nanowires: Temperature-Dependent Effect

Temperature-dependent growth of germanium oxide and silicon oxide based nanostructures, aligned silicon oxide nanowire assemblies, and silicon oxide microtubes

Synthesis of Germanium Oxide Mesostructures with a New Intermediate State

Synthesis and Characterization of Nano/micro-Structured Crystalline Germanium Dioxide with Novel Morphology

High-quality Germanium Dioxide Thin Films with Low Interface State Density Using a Direct Neutral Beam Oxidation Process

Synthesis and Characterization of Si/Ge Composite Nanostructures

Single Crystalline Semi-Nanotubes Of Indium Germanate

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

Shape-Controllable Synthesis of Indium Oxide Structures: Nanopyramids and Nanorods

Morphology Control of Indium Germanate Nanowires, Nanoribbons, and Hierarchical Nanostructures

Synthesis of Germanium Nanowires

Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

Controlled Synthesis of In2O3 Octahedrons and Nanowires

A Universal Growth Method for High Quality Phase-Engineered Germanium Chalcogenide Nanosheets

Controllable growth of GeSi nanostructures by molecular beam epitaxy

Colloidal synthesis, physical properties, and applications of zero- and one-dimensional GeSn nanostructures