Abstract:Spin-transfer torque random access memory (STT-RAM) is a promising nonvolatile memory technology aiming on-chip or embedded applications. In recent years, many researches have been conducted to improve the storage density and enhance the scalability of STT-RAM, such as reducing the write current and switching time of magnetic tunneling junction (MTJ) devices. In parallel with these efforts, the continuous increasing of tunnel magneto-resistance(TMR) ratio of the MTJ inspires the development of multi-level cell (MLC) STT-RAM, which allows multiple data bits be stored in a single memory cell. Two types of MLC STT-RAM cells, namely, parallel MLC and series MLC, were also proposed. The storage margin of a MLC STT-RAM cell, i.e., the distinction between the lowest and highest resistance states, is partitioned into multiple segments for multi-level data representation. As a result, the performance and reliability of MLC STT-RAM cells become more sensitive to the MOS and MTJ device variations and the thermal-induced randomness of MTJ switching. In this work, we systematically analyze the variation sources of MLC STT-RAM designs and their impacts on the reliability of the read and write operations. On top of that, we also discuss the optimal device parameters of the MLC MTJ for the minimization of the operation error rate of the MLC STT-RAM cells from statistical design perspective. Our simulation results show that under the current available technology, series MLC STT-RAM demonstrates overwhelming benefits in the read and write reliability compared to parallel MLC STT-RAM and could potentially satisfy the requirement of commercial practices.

A Multi-Level Cell for STT-MRAM Realized by Capping Layer Adjustment

DFSTT-MRAM: Dual Functional STT-MRAM Cell Structure for Reliability Enhancement and 3-D MLC Functionality

Multi-level cell Spin Transfer Torque MRAM based on stochastic switching

Write-Efficient STT/SOT Hybrid Triple-Level Cell for High-Density MRAM

Multi-level Cell STT-RAM: is It Realistic or Just a Dream?

A Spin Hall Effect-Based Multi-Level Cell for Mram

Access scheme of Multi-Level Cell Spin-Transfer Torque Random Access Memory and its optimization

High Density Spin-Transfer Torque (STT)-MRAM Based on Cross-Point Architecture

Area-Efficient 1T-2D-2MTJ SOT-MRAM Cell for High Read Performance

Two-bit Multi-Level Spin Orbit Torque MRAM with the Fully One-Step Write Operation.

Advanced Low Power Spintronic Memories Beyond STT-MRAM

Cross-Point Architecture for Spin-Transfer Torque Magnetic Random Access Memory

The fabrication of STT-MRAM memory cell with ultra-low switching power

Complementary-Magnetization-Switching Perpendicular Spin-Orbit Torque Random-Access Memory Cell for High Read Performance

A 16 Kb Spin-Transfer Torque Random Access Memory with Self-Enable Switching and Precharge Sensing Schemes

Demonstration of a NAND-Like SOT-MRAM Multi-Level Cell with Two Operational Modes

RAM and TCAM Designs by Using STT-MRAM

Proposal of High Density Two-Bits-Cell Based NAND-Like Magnetic Random Access Memory.

Multi-Port 1R1W Transpose Magnetic Random Access Memory by Hierarchical Bit-Line Switching

Odesy: A Novel 3t-3mtj Cell Design With Optimized Area Density, Scalability And Latency

3T2M Canted-Type X SOT-MRAM: Field-free, High-Energy-efficiency, and High-Read-margin Memory Toward Cache Applications