Abstract:A CMOS compatible P+/N-well/P-sub double junction photodiode pixel was proposed, which can efficiently detect fluorescence from CsI(Tl) scintillation in an X-ray sensor. Photoelectric and spectral responses of P+/N-well, N-well/P-sub and P+/N-well/P-sub photodiodes were analyzed and modeled. Simulation results show P+/N-well/P-sub photodiode has larger photocurrent than PC/Nwell photodiode and N-well/P-sub photodiode, and its spectral response is more in accordance with CsI(Tl) fluorescence spectrum. Improved P+/N-well/P-sub photodiode detecting CsI(Tl) fluorescence was designed in CSMC 0.5 mu m CMOS process, CTIA (capacitive transimpedance amplifier) architecture was used to readout photocurrent signal. CMOS X-ray sensor IC prototype contains 8 x 8 pixel array and pixel pitch is 100 x 100 mu m(2). Testing results show the dark current of the improved P+/N-well/P-sub photodiode (6.5 pA) is less than that of PC/Nwell and P+/N-well/P-sub photodiodes (13 pA and 11 pA respectively). The sensitivity of P+/N-well/P-sub photodiode is about 20 pA/lux under white LED. The spectrum response of P+/N-well/P-sub photodiode ranges from 400 nm to 800 nm with a peak at 532 nm, which is in accordance with the fluorescence spectrum of CsI(Tl) in an indirect X-ray sensor. Preliminary testing results show the sensitivity of X-ray sensor IC under Cu target X-ray is about 0.21 V.m(2)/W or 5097e(-)/pixel @ 8.05 keV considering the pixel size, integration time and average energy of X-ray photons.

A CMOS fully differential W-band passive imager with <2 K NETD

A CMOS Integrated W-band Passive Imager

100 Ghz Integrated Cmos Passive Imager with > 100 Mv/W Responsivity, 23fw/root Hz Nep

A D-Band Passive Imager in 65 Nm CMOS

A Cmos Image Sensor For Monochromatic Spectrum Imaging

A Cmos Vertically Integrated Device for Monochromatic Spectrum Detection

A compact, fully differential D-band CMOS amplifier in 65nm CMOS

A Max 349 GHz 18.2mw/pixel CMOS Inter-Modulated Regenerative Receiver for Tri-Color Mm-Wave Imaging

A 1.2 Gbps Failsafe Low Jitter LVDS Transmitter-Receiver Applied in CMOS Image Sensor.

Double Junction Photodiode for X-Ray Cmos Sensor Ic

A High-resolution Colloidal Quantum Dot Imager by Monolithic Integration

A 144 GHz 2.5mW multi-stage regenerative receiver for mm-Wave imaging in 65nm CMOS

A Fully Integrated W-Band Four-Channel Silicon-Based Radiometer Array in 65-nm CMOS.

Cmos-Compatible Integrated Spectrometer Based on Echelle Diffraction Grating and Msm Photodetector Array

Novel CMOS image sensor with a 132-dB dynamic range

A 12-Μm Pixel Pitch 640×512 Resolution 120 °C Operating Range TEC-Less Bolometric Infrared Imager with Ultra Low Responsivity Drift.

A 14-Bit Differential-Ramp Single-Slope Column-Level Adc For 640x512 Uncooled Infrared Imager

An LWIR QWIP FPA with Sub-5Mk NETD and Large Dynamic Range

A Cmos Detector System for Fluorescent Bio-Sensing Application

High Performance CMOS Image Sensor for Low Light Imaging

Multispectral CCD-in-CMOS Time Delay Integration imager for high resolution Earth observation

A CMOS fully differential W-band passive imager with &#60;2 K NETD