A Fully Integrated W-Band Four-Channel Silicon-Based Radiometer Array in 65-nm CMOS.

Shi Chen,Qi Zhao,Lei Zhang,Yan Wang
DOI: https://doi.org/10.1109/ISCAS46773.2023.10181369
2023-01-01
Abstract:This paper presents a fully integrated W-band multi-channel silicon-based radiometer array in a 65-nm CMOS process. Four channels are integrated to achieve higher resolution and sensitivity. A single channel consists of low noise amplifier (LNA), detector, and analog baseband (ABB), respectively. The four-stage LNA achieves a power gain of 29.9dB, a minimum noise figure (NF) of 5.0dB over the band of interest. The detector achieves responsivity of 2.34 kV/W and 23.9 pW/root Hz noise equivalent power (NEP). The radiometer achieves a responsivity of 42293 MV/W, an NEP of 0.21 fW/root Hz, and a temperature resolution (NETD) of 0.226 K with a 1 ms integration time. The total power consumption is 254.6 mW.
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