Abstract:Increasing demands on high data-rates accelerate the development of low-noise receiver systems for modern wireless applications, such as multi-Gb/s data-rate E-band cellular backhaul networks [1]. The noise from a low-noise amplifier (LNA) is the main part of the total noise for a receiver system. Thus, noise figure (NF) is one of the most crucial features for the LNA. To decrease the NF of an LNA, a common approach utilizes a noisecanceling technique [2]. In this way, an additional auxiliary amplifier is introduced to counteract noise generated by the main amplifier. The conventional implementation is a common-gate (CG)-based topology in the first stage of the LNA (Fig. 25.3.1 top). However, due to the influence of parasitics from transistors and routings at a millimeterwave band, there are unavoidable amplitude and phase mismatches for signals and noises between CG and common-source (CS) paths. For analysis, $\mathsf{A}_{\mathsf{G}}$ and $\mathsf{A}_{\mathsf{S}}$ are defined as the gain reduction in CG and CS paths, respectively. Thus, an amplitude mismatch of $\mathsf{A}_{\mathsf{G}}/\mathsf{A}_{\mathsf{S}}$ exists between CG and CS paths. Besides, $\Delta\varphi$ is the phase mismatch between the two paths. From the equation in Fig. 25.3.1, the noise factor of the CG-based stage $(\mathsf{F}_{1})$ is deteriorated with the increase of mismatch. The effect of noise cancellation is weakened due to the mismatches, while the power of the combined signal is reduced. Besides, since the transconductance of transistors becomes low with increasing frequency, the power gain of the LNA first stage is limited, which leads to a dominant noise contribution from the second stage $(\mathsf{F}_{2})$ to the total noise of the LNA. Then, to improve the gain of the first stage, $\mathsf{G}_{\mathsf{m}}$ -boosting techniques are widely used in millimeter-wave bands [2–6]. However, with increased $\mathsf{G}_{\mathsf{m}}$ , the amplitude and phase mismatches between CG and CS paths are enlarged. Thus, noise canceling in the second stage is necessary.

A Q-band CMOS LNA with noise cancellation

A Q-band CMOS LNA Exploiting Transformer Feedback and Noise-Cancelling

Analysis And Design Of Inductorless Wideband Low-Noise Amplifier With Noise Cancellation Technique

A 0.061-Mm² 1–11-Ghz Noise-Canceling Low-Noise Amplifier Employing Active Feedforward with Simultaneous Current and Noise Reduction

A BiCMOS Implementation of Noise Canceling Low Noise Amplifier for Wideband Applications

A Wideband BiCMOS Thermal Noise Canceling Low Noise Amplifier with Temperature Compensation

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A 70–86-Ghz Deep-Noise-Canceling LNA with Dual-Stage Noise Cancellation Using Asymmetric Compensation Transformer and 4-to-1 Hybrid-Phase Combiner

A Wideband CMOS Inductorless Low Noise Amplifier Employing Noise Cancellation for Digital TV Tuner Applications

A Ku-Band 3.3-V LNA with Multicoupled Q-Enhancement Transformer and Current-Reuse Techniques in 65-Nm CMOS

A 28-/39-ghz Dual-Band CMOS LNA with Shunt-Series Transformer Feedback

A 6-18Ghz Low-Noise Amplifier Using Noise Canceling Technique in 130-Nm CMOS PD-SOI.

A CMOS Wide-Band Low-Noise Amplifier with Balun-Based Noise-Canceling Technique

A 0.0081mm2 0.15–5.9-Ghz Low Noise Amplifier with Noise Cancelling and Current Reuse Techniques

Ultralow Power E-Band Low-Noise Amplifier with Three-Stacked Current-Sharing Amplification Stages in 28-Nm CMOS

A 7.2–27.3 GHz CMOS LNA With 3.51 ±0.21 dB Noise Figure Using Multistage Noise Matching Technique

A 4.8db NF, 70-to-86ghz Deep-Noise-Canceling LNA Using Asymmetric Compensation Transformer and 4-to-1 Hybrid-Phase Combiner in 40nm CMOS

Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz