Use of Fluorine-Doped Silicon Oxide for Temperature Compensation of Radio Frequency Surface Acoustic Wave Devices.
Satoru Matsuda,Motoaki Hara,Michio Miura,Takashi Matsuda,Masanori Ueda,Yoshio Satoh,Ken-ya Hashimoto
DOI: https://doi.org/10.1109/tuffc.2012.2164
IF: 3.267
2012-01-01
IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control
Abstract:This paper investigates acoustic properties, including the temperature coefficient of elasticity (TCE), of fluorine-doped silicon oxide (SiOF) films and proposes the application of the films to the temperature compensation of RF SAW devices. From Fourier transform infrared spectroscopy (FT-IR), SiOF films were expected to possess good TCE properties. We fabricated a series of SAW devices using the SiOF-overlay/Cu-grating/LiNbO(3)-substrate structure, and evaluated their performance. The experiments showed that the temperature coefficient of frequency (TCF) increases with the fluorine content r, as we expected from the FT-IR measurement. This means that the Si-O-Si atomic structure measurable by the FT-IR governs the TCE behavior of SiO(2)-based films even when the dopant is added. In comparison with pure SiO(2) with the film thickness h of 0.3 wavelengths (λ), TCF was improved by 7.7 ppm/°C without deterioration of the effective electromechanical coupling factor K2 when r = 3.8 atomic % and h = 0.28λ. Fluorine inclusion did not obviously influence the resonators' Q factors when r < 8.8 atomic %.