Deep-subwavelength Integrated Optoelectronics

Xiaobo Yin,Renmin Ma,Ming Liu,Ulin-Avila, E.

DOI: https://doi.org/10.1364/acp.2012.as1b.1

2012-01-01

Abstract:To mitigate the ever worsening bandwidth crisis of current data communication architectures, here we present nanoscale integrated optoelectronics devices including multiplexed nanolasers and high speed graphene optical modulators for future photonic integrations with high density.

What problem does this paper attempt to address?

Advancing Integrated Photonics and Microreactor Technologies with Ultrafast Laser Processing

Min Wang,Zhiwei Fang,Jia Qi,Junxia Zhou,Zhe Wang,Rongbo Wu,Renhong Gao,Ni Yao,Sanaul Haque,Saeed Farajollahi,Jintian Lin,Wei Fang,Tao Lu,Wei Chu,Ya Cheng

DOI: https://doi.org/10.1117/12.2585248

2021-01-01

Abstract:We present our latest progresses on the development of integrated photonic devices as well as microfluidic chips of unprecedented characteristics and performances using femtosecond laser micromachining. We demonstrate ultra-high Q microresonators in lithium niobate on insulator (LNOI), on-chip micro-laser and waveguide amplifier, and high-throughput micro-chemical reactor. The achievements are the result of persistent effort on improving the precision and efficiency in ultrafast laser processing.
Integrated Nanophotonic Devices for Optical Interconnections

Yidong Huang,Xue Feng,Kaiyu Cui,Yongzhuo Li,Yu Wang

DOI: https://doi.org/10.1117/12.2219173

2016-01-01

Abstract:Nanostructure is an effective solution for realizing optoelectronic devices with compact size and high performances simultaneously. This paper reports our research progress on integrated nanophotonic devices for optical interconnections. We proposed a parent-sub microring structure for optical add-drop multiplexer (OADM) with compact footprint, large free spectral range, and uniform channel spacing. All eight channels can be multiplexed and de-multiplexed with 2.6 dB drop loss, 0.36 nm bandwidth (> 40 GHz), -20 dB channel crosstalk, and high thermal tuning efficiency of 0.15 nm/mW. A novel principle of optical switch was proposed and demonstrated based on the coupling of the defect modes in photonic crystal waveguide. Switching functionality with bandwidth up to 24 nm and extinction ratio in excess of 15 dB over the entire bandwidth was achieved, while the footprint was only 8 mu m x 17.6 mu m. We proposed an optical orbital angular momentum (OAM) coding and decoding method to increase the data-carrying capacity of wireless optical interconnect. An integrated OAM emitter, where the topological charge can be continuously varied from -4 to 4 was realized. Also we studied ultrafast modulated nLED as the integrated light source for optical interconnections using a nanobeam cavity with stagger holes.
Silicon Photonic Network-on-chip and Enabling Components

Ting Hu,Chen Qiu,Ping Yu,LongZhi Yang,WanJun Wang,XiaoQing Jiang,Mei Yang,Lei Zhang,JianYi Yang

DOI: https://doi.org/10.1007/s11431-012-5112-2

2013-01-01

Abstract:As the transistor’s feature scales down and the integration density of the monolithic circuit increases continuously,the traditional metal interconnects face significant performance limitation to meet the stringent demands of high-speed,low-power and low-latency data transmission for on-and off-chip communications.Optical technology is poised to resolve these problems.Due to the complementary metal-oxide-semiconductor（CMOS） compatible process,silicon photonics is the leading candidate technology.Silicon photonic devices and networks have been improved dramatically in recent years,with a notable increase in bandwidth from the megahertz to the multi-gigahertz regime in just over half a decade.This paper reviews the recent developments in silicon photonics for optical interconnects and summarizes the work of our laboratory in this research field.
Ultra-High Dynamic Extinction Ratio Electro-Optical Modulator with Coupled Microring on SOI Platform

Zhuo Cheng,Bigeng Chen,Chunlei Sun,Maoliang Wei,Shaoliang Yu,Lan Li,Hongtao Lin,Yunjiang Rao

DOI: https://doi.org/10.1109/acp55869.2022.10089079

2022-01-01

Abstract:A 5 th -order coupled microring electro-optical modulator with PIN structures is proposed and experimentally demonstrated on SOI integrated photonics platform. Ultra-high dynamic extinction ratio (ER) up to 60 dB is achieved benefiting from the high-order optical band-pass filter design. The device size on chip is only 400×220 μm 2 including electrodes and the driving voltage is 2.1 V corresponding to 0.23 W power consumption. Such integrated modulators would be promising in building compact and low-power distributed optical fiber sensing systems using low-background-noise optical pulses.
Substrate-blind Photonic Integration

Hongtao Lin,Lan Li,Yi Zou,Qingyang Du,Okechukwu Ogbuu,Juejun Hu,Charmayne Smith,Erick Koontz,Kathleen Richardson

DOI: https://doi.org/10.1364/iprsn.2015.it3a.1

2015-01-01

Abstract:Using high-index glasses as the backbone optical material, both passive and active photonic devices with record performance were successfully integrated on a wide variety of substrates including semiconductors, glasses, infrared crystals, polymers, and graphene.
Broadband Nanophotonic Wireless Links and Networks Using On-Chip Integrated Plasmonic Antennas.

Yuanqing Yang,Qiang Li,Min Qiu

DOI: https://doi.org/10.1038/srep19490

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Owing to their high capacity and flexibility, broadband wireless communications have been widely employed in radio and microwave regimes, playing indispensable roles in our daily life. Their optical analogs, however, have not been demonstrated at the nanoscale. In this paper, by exploiting plasmonic nanoantennas, we demonstrate the complete design of broadband wireless links and networks in the realm of nanophotonics. With a 100-fold enhancement in power transfer superior to previous designs as well as an ultrawide bandwidth that covers the entire telecommunication wavelength range, such broadband nanolinks and networks are expected to pave the way for future optical integrated nanocircuits.
Two‐Dimensional Materials for Integrated Photonics: Recent Advances and Future Challenges

Jianghong Wu,Hui Ma,Peng Yin,Yanqi Ge,Yupeng Zhang,Lan Li,Han Zhang,Hongtao Lin

DOI: https://doi.org/10.1002/smsc.202000053

2021-01-01

Small Science

Abstract:With the development of novel optoelectronic materials and nanofabrication technologies, integrated photonics is a rapidly developing field that will promote the development and application of next‐generation photonic devices. In recent years, emerging two‐dimensional materials (2DMs) including graphene, transition metal dichalcogenides (TMDCs), black phosphorus (BP), and ternary compounds show many complementarities and unique characteristics over those of traditional optoelectronic materials including broadband absorption, ultrafast carrier mobility, strong nonlinear effects, and compatibility for monolithic integration. Herein, the recent progress on waveguide‐integrated active devices for a full photonic circuit based on 2DMs is reviewed. Both the development of nanofabrication techniques and the working mechanism of active photonic components based on 2DMs containing integrated light sources, waveguide‐integrated modulators, photodetectors, as well as some advanced 2DMs‐based optoelectronic devices are illustrated in detail. In the end, the existing challenges and perspectives on novel 2DMs‐integrated photonics are summarized and discussed.
A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications

solomon assefa,steven m shank,william m j green,marwan h khater,e w kiewra,carol reinholm,swetha kamlapurkar,alexander v rylyakov,clint l schow,folkert horst,huapu pan,teya topuria,p m rice,douglas m gill,jessie rosenberg,tymon barwicz,min yang,jonathan e proesel,jens hofrichter,b j offrein,xiaoxiong gu,wilfried haensch,john ellismonaghan,yurii a vlasov

DOI: https://doi.org/10.1109/IEDM.2012.6479162

2012-01-01

Abstract:The first sub-100nm technology that allows the monolithic integration of optical modulators and germanium photodetectors as features into a current 90nm base high-performance logic technology node is demonstrated. The resulting 90nm CMOS-integrated Nano-Photonics technology node is optimized for analog functionality to yield power-efficient single-die multichannel wavelength-mulitplexed 25Gbps transceivers.
High-speed Optoelectronic Devices

Yi Luo,Changzheng Sun,Bing Xiong,Jian Wang,Zhibiao Hao,Yanjun Han,Hongtao Li,Lai Wang

DOI: https://doi.org/10.1007/s11432-022-3669-5

2023-01-01

Science China Information Sciences

Abstract:High-speed optoelectronic devices are key components of modern fiber communication systems, and the backbone of information technology. In this paper, we present our work on high-speed devices over the past decades, including high-performance semiconductor lasers and integrated light sources, wideband electro-optic modulators, high saturation power photodetectors, and their applications in both fiber communications and microwave photonics. Gain-coupled distributed feedback (DFB) lasers were fabricated with high single-mode yield. Electroabsorption modulated lasers (EMLs) were demonstrated based on identical epitaxial layer integration scheme, including single channel 40 Gb/s EMLs, and 4 × 25 and 4 × 56 Gb/s EML arrays. Both InP and thin-film lithium niobate based low half-wave voltage electro-optic modulators with modulation bandwidth over 40 GHz were demonstrated. Back-illuminated modified uni-traveling-carrier photodetectors (MUTC-PDs) with high saturation power and bandwidth exceeding 100 GHz were developed. Applications of high-speed optoelectronic devices in fiber-optic links and sub-THz wave generation are presented.
High-performance Optoelectronics for Integrated Photonic Neural Networks

Martin Thomaschewski,Zibo Hu,Behrouz Movahhed Nouri,Yaliang Gui,Hao Wang,Salem Altaleb,Hamed Dalir,Volker J. Sorger

DOI: https://doi.org/10.1117/12.2650319

2023-01-01

Abstract:Integrated optoelectronic devices represents a fundamental building block of hardware accelerators for photonics neural networks. Nanophotonic electro-optic modulators and detectors have significant performance advantages in power efficiency, communication bandwidth, and parallelism compared to conventional free-space photonics. Here, we present strategies and experimental validations of novel high-performance nanophotonic opto-electronic devices, involving heterogeneous integration of emerging materials into silicon photonic integrated circuits to exploit new functionality and device-scaling laws for efficient and ultrafast modulators, detectors, and photonic nonvolatile memory. The optoelectronic implementations of neural networks are demonstrated which significantly extends the spectrum of information processing capabilities.
All van der Waals Integrated Nanophotonics

Haonan Ling,Renjie Li,Artur R. Davoyan

DOI: https://doi.org/10.1021/acsphotonics.0c01964

2020-09-17

Abstract:Integrated optics is at the heart of a wide range of systems from remote sensing and communications to computing and quantum information processing. Demand for smaller and more energy efficient structures stimulates search for more advanced material platforms. Here, we propose a concept of an all van der Waals photonics, where we show that electronically bulk transition metal dichalcogenide (TMDC) semiconductors are well fitted for the design of key optical components for nanoscale and integrated photonics. Specifically, we demonstrate theoretically that owing to low optical loss and high refractive index across near-infrared and telecom frequency bands, components made of bulk TMDCs can potentially outperform counterparts made of conventional 3D semiconductors, such as Si and III/Vs. We discuss several key quantum and classical optical components and show that bulk TMDCs may pave the way to smaller footprint devices, more energy efficient electro-optical modulators, and stronger quantum light-materials interaction. Enhanced optical performance, ease of integration, and a wide selection of materials suggest that bulk TMDCs may complement and, potentially, replace existing integrated photonics systems.

Optics,Applied Physics
Multilayer Integrated Nano-Optical Devices

Jian (Jim) Wang,Xuegong Deng,Xiaoming Liu,Anguel Nikolov,Paul Sciortino,Feng Liu,Lei Chen

DOI: https://doi.org/10.1117/12.646272

2006-01-01

Abstract:We report optical devices based on monolithic integration of multiple nano-structured optical functional layers. Ultraviolet (UV)-nanoimprint lithography along with thin-film deposition, high aspect-ratio reactive ion etching (RIE) and trench-filling technologies were used in fabrication and integration of individual nano-structured optical functional layers. Structures with sub-50 nm linewidth were required in order to achieve good optical performance in the near-UV and visible wavelengths. The ability to integrate multiple nanostructure-based optical layers opens a path for novel integrated optical devices, as well as a new strategy for driving both miniaturization and cost.
Deep photonic network platform enabling arbitrary and broadband optical functionality

Ali Najjar Amiri,Aycan Deniz Vit,Kazim Gorgulu,Emir Salih Magden

DOI: https://doi.org/10.1038/s41467-024-45846-3

IF: 16.6

2024-02-16

Nature Communications

Abstract:Abstract Expanding applications in optical communications, computing, and sensing continue to drive the need for high-performance integrated photonic components. Designing these on-chip systems with arbitrary functionality requires beyond what is possible with physical intuition, for which machine learning-based methods have recently become popular. However, computational demands for physically accurate device simulations present critical challenges, significantly limiting scalability and design flexibility of these methods. Here, we present a highly-scalable, physics-informed design platform for on-chip optical systems with arbitrary functionality, based on deep photonic networks of custom-designed Mach-Zehnder interferometers. Leveraging this platform, we demonstrate ultra-broadband power splitters and a spectral duplexer, each designed within two minutes. The devices exhibit state-of-the-art experimental performance with insertion losses below 0.66 dB, and 1-dB bandwidths exceeding 120 nm. This platform provides a tractable path towards systematic, large-scale photonic system design, enabling custom power, phase, and dispersion profiles for high-throughput communications, quantum information processing, and medical/biological sensing applications.

multidisciplinary sciences
Si-based Optoelectronic Devices for Optical Communications

Zhiping Zhou,Dingshan Gao,Yi Wang,Jinlin Chen

DOI: https://doi.org/10.1117/12.688722

2006-01-01

Abstract:The progress in Si-based optoelectronic devices and their integration for optical communications are summarized. Integrations on different material platforms are described, but emphasis is given to new micro/nano scale emitters, detectors, and light beam controlling devices. The perspective of micro/nano scale monolithic integration of optical devices and electronic devices on a single chip by standard CMOS technologies is presented. The possibility of using these devices for computer data communications, board-to-board and chip-to-chip, is also discussed.
Integrated optoelectronics with two-dimensional materials

Zhenzhou Cheng,Rongxiang Guo,Jiaqi Wang,Yi Wang,Zhengkun Xing,Lei Ma,Wei Wei,Yu Yu,Tiegen Liu,Hon Ki Tsang

DOI: https://doi.org/10.1360/nso/20220022

2022-12-02

National Science Open (NSO)

Abstract:Authors: Zhenzhou Cheng, Rongxiang Guo, Jiaqi Wang, Yi Wang, Zhengkun Xing, Lei Ma, Wei Wei, Yu Yu, Hon Ki Tsang and Tiegen Liu. National Science Open Vol. 1 , page 20220022 Published online: 27/10/2022 Keywords: integrated optoelectronics ; two-dimensional materials ; heterogeneous integration ; silicon photonics.
Integrated nano-optic devices based on immersion nano-gratings made by imprint lithography and nano-trench-filling technology

jian wang,xuegong deng,paul sciortino,ron thomas varghese,anguel nikolov,feng liu,xiaoming liu,lei chen

DOI: https://doi.org/10.1117/12.615951

2005-01-01

Abstract:Nano-optic retarders and polarizers based on dielectric and metal nano-gratings were fabricated by UV-nanoimprint lithography. Different from conventional nanostructure-based optical devices, atomic layer deposition, a highly uniform and conformal deposition process, were utilized to fill trenches of the both dielectric and metal nano-gratings. The resulted immersion nano-grating design opens a path for innovative nano-grating based optical devices and integrated optical devices. As an example, a high-performance fully-buried aluminum nanowire-gird polarizer was developed which allowed us to achieve a monolithically integrated visible circular polarizer. The ability to integrate multiple nanostructure-based optical layers opens a path for innovative integrated optical devices as well as a new strategy for driving both miniature and cost.
Progress on Si-Based Optoelectronic Devices and Integration

Zhou Zhiping,Gao Dingshan,Wang Yi,Chen Jinlin,Feng Junbo

2007-01-01

Laser & Optoelectronics Progress

Abstract:This paper summarizes the progresses in Si-based micro/nano lasers, modulators, detectors, and optical propagating and controlling devices. The emphasis is given to describe the important contributions of some novel structures such as surface plasmon, quantum well, photonic crystals and nano gratings on improving the properties and decreasing overall sizes of optoelectronic devices. The perspective of micro/nano scale monolithic integration of optical devices and electronic devices on a single chip by standard complementary mental oxide semiconductor (CMOS) technologies is also presented.
Nanophotonic inspection of deep-subwavelength integrated optoelectronic chips

Ying Che,Tianyue Zhang,Xiaowei Liu,Dejiao Hu,Shichao Song,Yan Cai,Yaoyu Cao,Jie Zhang,Shi-Wei Chu,Xiangping Li

2024-04-03

Abstract:Artificial nanostructures with ultrafine and deep-subwavelength feature sizes have emerged as a paradigm-shifting platform to advanced light field management, becoming a key building block for high-performance integrated optoelectronics and flat optics. However, direct optical inspection of such integrated chips with densely packed complex and small features remains a missing metrology gap that hinders quick feedback between design and fabrications. Here, we demonstrate that photothermal nonlinear scattering microscopy can be utilized for direct imaging and resolving of integrated optoelectronic chips beyond the diffraction limit. We reveal that the inherent coupling among deep-subwavelength nanostructures supporting leaky resonances allows for the pronounced heating effect to access reversible nonlinear modulations of the confocal reflection intensity, leading to optical resolving power down to 80 nm (~lambda/7). The versatility of this approach has been exemplified by direct imaging of silicon grating couplers and metalens with a minimum critical dimension of 100 nm, as well as central processing unit (CPU) chip with 45 nm technology, unfolding the long-sought possibility of in-situ, non-destructive, high-throughput optical inspection of integrated optoelectronic chips and nanophotonic chips.

Optics,Applied Physics
An Integrated Hybrid Nanophotonics Platform

V. J. Sorger,Z. Ye,N. Pholchai,R. F. Oulton,R. Ma,X. Yin,X. Zhang

DOI: https://doi.org/10.1364/fio.2011.fwc2

2011-01-01

Abstract:Based on a hybrid-plasmon platform, we report the first demonstration of low-loss, deep-sub-λ waveguiding and plasmon semiconductor Nanolaser and strong emitter-to-waveguide coupling towards wavelength-scale photonic integrated circuits and quantum optics devices.
Subwavelength Engineering in Silicon Photonic Devices

Wen Zhou,Zhenzhou Cheng,Xia Chen,Ke Xu,Xiankai Sun,HonKi Tsang

DOI: https://doi.org/10.1109/jstqe.2019.2899757

IF: 4.9

2019-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:In the past decade, there has been tremendous progress in using subwavelength-scale nanostructures with elaborately designed periodic and disordered photonic materials for applications in integrated photonics. In this paper, we review the advances in subwavelength engineering used in silicon photonic devices, with an emphasis on our own contributions on the use of subwavelength gratings and hyperuniform disordered photonic structures to attain state-of-the-art performances for near- and mid-infrared applications in fiber-chip coupling, slot waveguides for refractive-index sensing, mode conversion, wavelength filtering, integrated resonators, and ultracompact high-extinction and broadband integrated polarizers.

Deep-subwavelength Integrated Optoelectronics

Advancing Integrated Photonics and Microreactor Technologies with Ultrafast Laser Processing

Integrated Nanophotonic Devices for Optical Interconnections

Silicon Photonic Network-on-chip and Enabling Components

Ultra-High Dynamic Extinction Ratio Electro-Optical Modulator with Coupled Microring on SOI Platform

Substrate-blind Photonic Integration

Broadband Nanophotonic Wireless Links and Networks Using On-Chip Integrated Plasmonic Antennas.

Two‐Dimensional Materials for Integrated Photonics: Recent Advances and Future Challenges

A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications

High-speed Optoelectronic Devices

High-performance Optoelectronics for Integrated Photonic Neural Networks

All van der Waals Integrated Nanophotonics

Multilayer Integrated Nano-Optical Devices

Deep photonic network platform enabling arbitrary and broadband optical functionality

Si-based Optoelectronic Devices for Optical Communications

Integrated optoelectronics with two-dimensional materials

Integrated nano-optic devices based on immersion nano-gratings made by imprint lithography and nano-trench-filling technology

Progress on Si-Based Optoelectronic Devices and Integration

Nanophotonic inspection of deep-subwavelength integrated optoelectronic chips

An Integrated Hybrid Nanophotonics Platform

Subwavelength Engineering in Silicon Photonic Devices