Abstract:Graphene offers many useful properties that can revolutionize modern electronic devices. Specifically, it provides high charge carrier mobility in a mechanically robust, atomically thin form factor. Many of these properties are observed in graphene which is prepared from exfoliated graphite and processed with electron beam lithography. These processes are both time intensive and cost- prohibitive for the large-scale production necessary for use in consumer electronics. This work details the processing and characterization of commercially available graphene from chemical vapor deposition (CVD) on SiO2/Si and on hBN-layered SiO2/Si wafers using conventional photolithography on the 4′′ wafer standard. The findings indicate that the CVD graphene films are resilient after processing even for lengths up to 1 mm. Electrical characterization via resistance measurements and the Hall Effect at room temperature clearly indicates the influence of the substrate material on the graphene’s electrical properties. At these length scales, graphene on SiO2 resembles that of a lightly doped semiconductor in terms of its carrier density (7.8 × 1015 cm−2), yet its carrier mobility (2.6 cm2/Vs) resembles that of a metal. Graphene on hBN/SiO2 has a carrier density of 8.2 × 1012 cm−2 and carrier mobility of 2.68 × 103 cm2/Vs—comparable to existing high-mobility semiconducting materials. CVD graphene and conventional photolithography does provide a cost-effective means for producing large form-factor graphene devices for low to moderate mobility applications and eventually for large-scale monolithic graphene electronics.

Planar Tunnel Junction Fabrication and Bandgap Engineering on Bilayer Graphene

Planar electromagnetic band-gap structure based on graphene

Band gap and correlated phenomena in bilayer and trilayer graphene

Planar Tunneling Measurements of the Energy Gap in Biased Bilayer Graphene

Novel heterostructures by layering 2D materials

Bilayer graphene: gap tunability and edge properties

Bandgap engineering of two-dimensional C3N bilayers

Electric and Magnetic Field Induced Insulating States in High Quality Bilayer Graphene Pnp Junctions

First-principles Studies of Electric Field Effects on the Electronic Structure of Trilayer Graphene

Tunneling Spectroscopy of Quantum Hall States in Bilayer Graphene p-n Junctions

Fabrication and Characterization of Micrometer Scale Graphene Structures for Large-Scale Ultra-Thin Electronics

Featuring nuanced electronic band structure in gapped multilayer graphene

Observation of an Electrically Tunable Band Gap in Trilayer Graphene

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

Tunable Multi-Bands in Twisted Double Bilayer Graphene

Tunneling Plasmonics in Bilayer Graphene

Structural and electronic properties of bilayer and trilayer graphdiyne.

Epitaxial graphene: Designing a new electronics material

Stacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene

Lithographic band structure engineering of graphene

Tunneling and Josephson Coupling Studies of N-Layer Graphene