Abstract:Photoluminescence (PL) as a conventional yet powerful optical spectroscopy may provide crucial insight into the mechanism of carrier recombination and bandedge structure in semiconductors. In this study, mid-infrared PL measurements on vertically aligned InAs nanowires (NWs) are realized for the first time in a wide temperature range of up to 290 K, by which the radiative recombinations are clarified in the NWs grown on n- and p-type Si substrates, respectively. A dominant PL feature is identified to be from the type-II optical transition across the interfaces between the zinc-blend (ZB) and the wurtzite (WZ) InAs, a lower-energy feature at low temperatures is ascribed to impurity-related transition, and a higher energy feature at high temperatures originates in the interband transition of the WZ InAs being activated by thermal-induced electron transfer. The optical properties of the ZB-on-WZ and WZ-on-ZB interfaces are asymmetric, and stronger nonradiative recombination and weaker carrier-phonon interaction show up in the NWs on p-type substrate in which built-in electric field forms and leads to carrier assembling around the WZ-on-ZB interface. The results indicate that wide temperature-range infrared PL analysis can serve as efficient vehicle for clarifying optical properties and bandedge processes of the crystal-phase interfaces in vertically aligned InAs NWs.

Two-photon Luminescence Study of Optically Trapped InP Semiconductor Nanowires

Nonlinear Optical Processes in Optically Trapped InP Nanowires.

Combined Optical Trapping and Microphotoluminescence of Single InP Nanowires

Characterization of semiconductor nanowires using optical tweezers.

Resolving Stable Axial Trapping Points of Nanowires in an Optical Tweezers Using Photoluminescence Mapping.

Blueshift of electroluminescence from single n-InP nanowire/p-Si heterojunctions due to the Burstein-Moss effect.

Preparation of indium phosphide nanocrystallite and investigation of its optical properties

Dynamics of Strongly Degenerate Electron-Hole Plasmas and Excitons in Single Inp Nanowires

Optical properties of single InP and GaAs nanowire heterostructures

Two-Photon Excited Photoluminescence in Ingan Multi-Quantum-Wells Structures

Quantum Confinement Of Excitons In Wurtzite Inp Nanowires

Exciton Emission from Hybrid Organic and Plasmonic Polytype InP Nanowire Heterostructures

Two-photon Photoluminescence and Excitation Spectra of InGaN∕GaN Quantum Wells

Photoluminescence Properties of a Nearly Intrinsic Single InN Nanowire

Midinfrared Photoluminescence Up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of Inas Nanowires

Illuminating the second conduction band and spin-orbit energy in single wurtzite InP nanowires.

Polarization and Temperature Dependence of Photoluminescence from Zincblende and Wurtzite InP Nanowires

Ultrasensitive Visible Light Photoresponse and Electrical Transportation Properties of Nonstoichiometric Indium Oxide Nanowire Arrays by Electrospinning

Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE

Excitation Dependent Two-Component Spontaneous Emission and Ultrafast Amplified Spontaneous Emission in Dislocation-Free Ingan Nanowires

Direct Imaging of the Spatial Diffusion of Excitons in Single Semiconductor Nanowires