An 8x 10-Gb/s Source-Synchronous I/O System Based on High-Density Silicon Carrier Interconnects

Timothy O. Dickson,Yong Liu,Sergey V. Rylov,Bing Dang,Cornelia K. Tsang,Paul S. Andry,John F. Bulzacchelli,Herschel A. Ainspan,Xiaoxiong Gu,Lavanya Turlapati,Michael P. Beakes,Benjamin D. Parker,John U. Knickerbocker,Daniel J. Friedman
DOI: https://doi.org/10.1109/jssc.2012.2185184
2011-01-01
Abstract:A serial I/O chip set in 45nm SOI CMOS is mounted via 50µm pitch micro-C4 bumps to a silicon carrier and communicates over ultra-dense interconnects with pitches of between 8µm and 22µm. With DFE-IIR RX equalization, data is received over distances up to 6cm with channel losses as high as 16.3dB. The energy efficiency is better than 6.1pJ/bit.
What problem does this paper attempt to address?