A 1.4-Pj/b, Power-Scalable 16&Amp;#x00d7;12-Gb/s Source-Synchronous I/O with DFE Receiver in 32nm SOI CMOS Technology

Timothy O. Dickson,Yong Liu,S.V. Rylov,Ankur Agrawal,Seongwon Kim,Ping-Hsuan Hsieh,John F. Bulzacchelli,Mark Ferriss,H. Ainspan,Alexander Rylyakov,B. Parker,Christian Baks,Lei Shan,Young Kwark,J. Tierno,Daniel J. Friedman
DOI: https://doi.org/10.1109/cicc.2014.6945983
2014-01-01
Abstract:A power-scalable 2-Byte I/O operating at 12-Gb/s per lane is reported. The I/O includes controllable TX driver amplitude, flexible RX equalization, and multiple deskew modes. This allows power reduction when operating over low-loss, low-skew interconnects, while at the same time supporting higher-loss channels. Measurements of a test chip fabricated in 32nm SOI CMOS technology demonstrate 1.4-pJ/b efficiency over 0.75” Megtron-6 PCB traces, and 1.9-pJ/b efficiency over 20” Megtron-6 PCB traces.
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