Abstract:In recent years, Spin-Transfer Torque Random Access Memory (STT-RAM) has attracted significant attentions from both industry and academia due to its attractive attributes such as small cell area and non-volatility. However, long switching time and large programming energy of Magnetic Tunneling Junction (MTJ) continue being major challenges in STT-RAM designs. In order to overcome this problem, a Giant Spin-Hall Effect (GSHE) assisted STT-RAM structure (GSHE-RAM) has been recently invented. In this work, we investigate logic gates by using GSHE MTJs and two possible GSHE-RAM designs from the aspects of two different write access operations, namely, High Density GSHE-RAM and Disturbance Free GSHE-RAM, respectively. In High Density GSHE-RAM, GSHE current is shared by the entire bit line. Such a structure removes the GSHE control transistor from each GSHE-RAM cell and hence, substantially reduces the memory cell area. In Disturbance Free GSHE-RAM, one memory cell contains two transistors to remove the disturbance to the unselected bits and eliminate the possible erroneous flipping of the bits. In addition to memory designs, we also investigate logic gates by using GSHE MTJs. By leveraging the benefit of greater power efficiency and area density, GSHE MTJ elements become a suitable candidate for spintronic logic gates. Compare with traditional MOS transistors based logic gates, GSHE MTJ based logic can operate as a non-volatile memory and requires a much smaller number of elements to perform same logical operations (i.e., ‘AND’, ‘OR’, ‘NAND’ or ‘NOR’ gate.). And compare with other spin based logics, GSHE MTJ based logic also provides an better performance, excellent CMOS process compatibility and great fan-out ability.

Spin-MTJ based Non-volatile Flip-Flop

A Low-Power Low-VDD Nonvolatile Latch Using Spin Transfer Torque MRAM

Design of high-speed, low-power non-volatile master slave flip flop (NVMSFF) for memory registers designs

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

Nonvolatile SRAM architecture using MOSFET-based spin-transistors

STT-MRAM Based Low Power Synchronous Non-Volatile Logic with Timing Demultiplexing

Giant Spin-Hall Assisted STT-RAM and Logic Design.

Novel Memristor-based Nonvolatile D Latch and Flip-flop Designs

Low Power Computing Using STT-MRAM

High Speed, Low Resource and Non-volatile MTJ-CMOS Hybrid Logical Circuits

Low-power and area-efficient memristor based non-volatile D latch and flip-flop: Design and analysis

A ReRAM-Based Nonvolatile Flip-Flop With Self-Write-Termination Scheme for Frequent-OFF Fast-Wake-Up Nonvolatile Processors.

Architectural Exploration to Enable Sufficient MTJ Device Write Margin for STT-RAM Based Cache

Spin-hall Assisted STT-RAM Design and Discussion

Giant spin hall effect (GSHE) logic design for low power application

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory

Silicon Based Nonvolatile Magnetic Memristor.

Spintronic memristors for computing

Experimental Demonstration of Efficient Spin-Orbit Torque Switching of an MTJ with sub-100 ns Pulses

Thermoelectric Spin-Transfer Torque MRAM with Sub-Nanosecond Bi-Directional Writing using Magnonic Current