Abstract:In this work, we report on defect-free homogeneous behavior of Ni Schottky contacts patterned on surface treated n-GaN by photolithography with unity ideality factor, high temperature stability, and low reverse leakage. The barrier height (0.7 eV) and ideality factor (1.02) are found to be independent of temperature, indicating a highly homogeneous contact. The contacts are found to be stable with no significant change in ideality factor or leakage current up to an annealing temperature of 600 °C. Temperature dependence of the reverse leakage current shows no evidence for the existence of surface defects that would provide leakage paths, and the behavior was modeled by ATLAS simulations with an ideal homogeneous barrier of 0.7 eV. Consequently, the forward and reverse bias characteristics are explained by a common set of parameters. The surface treatment after the development and prior to metallization included an acid-based surface treatment. X-ray photoelectron spectroscopy (XPS) studies indicate that the hydroxide-based development process during photolithography changes the nitride surface composition by introducing excess C that degrades the ideality factor and introduces barrier inhomogeneity and high leakage currents. XPS studies further demonstrate that the restoration of a stable, Ga-rich surface, similar to as-grown surface, occurs due to the acid-based surface treatment, which is responsible for the observed unity ideality factor, homogeneous barrier, low leakage current, and high temperature stability.

The Schottky characteristics of Ti/n-GaAs surface-treated by N2 plasma

Effects of Surface Treatment on Non-alloyed Ti/Al Ohmic Contact of n-GaN

Temperature Dependence of the Specific Resistance in Ti/Al/Ni/Au Ohmic Contacts on (nh4)2sx Treated N-Type GaN

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Schottky Barrier Height Inhomogeneity of Ti/n-GaAs Contact Studied by the I-V-T Technique

Nitridation of GaAs(001) Using N2-RF Plasma

The Impact of the Surface Treatments on the Properties of Gan/3c-Sic/Si Based Schottky Barrier Diodes

Defect-free Ni/GaN Schottky barrier behavior with high temperature stability

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Effects of Fluorine-Based Plasma Treatment and Thermal Annealing on High-Al Content Algan Schottky Contact

Schottky Barrier and Interface Chemistry for Ni Contacted to Al0.8Ga0.2N Grown on C‐oriented AlN Single Crystal Substrates

Effects of Hydrogen on the Schottky Barrier of Ti/n-GaAs Diodes

Improved Schottky Barrier Characteristics for AlInN/GaN Diodes by Oxygen Plasma Treatment

Si[sub 3]N[sub 4] on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer

Si3N4 on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

Schottky Contact Properties of Ni/n-poly-Si0.87Ge0.13/n-Si(100) Heterostructure

Low Resistance Ti/Al/Ni/Au Ohmic Contact to (Nh4)(2)s-X Treated N-Type Gan for High Temperature Applications

Plasma Nitridation of Thin Si Layers for Gaas Dielectrics