Optimization and Scaling Limit Forecast of Nitrided Gate Oxide Using an Equivalent Nitride/oxide (N/O) Stack Model

VS Chang,CC Chen,Y Jin,CH Chen,TL Lee,SC Chen,MS Liang

DOI: https://doi.org/10.1109/icicdt.2004.1309983

2004-01-01

Abstract:A semi-empirical model was developed to calculate the equivalent oxide thickness (EOT) and leakage current of nitrided gate oxide by hypothetically dividing the nitrided oxide into a nitride/oxide (N/O) stack. The calculations agree well with the experimental data (R-2 > 0.99) for various nitrided oxides with EOT ranging from 12 to 23 Angstrom. A model-based strategy for the optimization of nitrided oxide is presented and demonstrated by a nitrided oxide sample which meets both the EOT and leakage current requirements of ITRS 65-nm low standby power (LSTP) technology and shows no electron mobility degradation. The model forecasts that a nitrogen concentration of 20% - approximately the maximum from oxide nitridation processes - satisfies the ITRS requirements for production until Year 2007. The production afterwards will require alternative dielectrics such as N/O stack or high-k materials for greater leakage current reductions.