Abstract:In this paper, double-clamped beam with a mass at the center has been fabricated on substrate of a Silicon-on-Insulator (SOI) wafer. Thin layer SOI Field-Effect Transistors (SOI-FETs) have been integrated at ends of the beam on top layer of the SOI wafer, which can be used for stress-sensing. Such a structure can be used as an accelerometer. The applied acceleration can be detected directly by the changing of the drain current. The measured sensitivity and noise floor of the device are 0.91 mV/g and 13 mg/Hz(-1/2). As expected performance of the SOI-FETs, such an accelerometer can be used in a wide temperature range (-60 degrees C to 200 degrees C) in some special applications, such as military, automobile, nuclear and well-logging industry application.Note to Practitioners-This paper describes the method for stress-sensing using the thin layer Silicon-on-Insulator Field-Effect Transistors (SOI-FETs). This method is characterized with adjustable sensitivity and wide working temperature range and is expected to apply in strain gauges, pressure sensors, accelerometers, and cantilever force/displacement sensors. In the paper we take the application in accelerometers for example. A structure of double-clamped beam with a mass at the center has been fabricated on the substrate of a SOI wafer. Based on the devices, we have measured the characteristics of the sensitivity, the noise floor and the working temperature, which is critical in some applications such as military, automobile, nuclear, and well-logging industry application.

A Piezoresistive Accelerometer with Axially Stressed Tiny Beams for Both Much Increased Sensitivity and Much Broadened Frequency Bandwidth

A High-Performance Micromachined Piezoresistive Accelerometer with Axially Stressed Tiny Beams

Piezoresistive Slot-Cantilever Type Accelerometer Inspired from Spider'S Slit Sensilla

Thin Layer Soi-Fets Used for Stress-Sensing and Its Application in Accelerometers

Mechanical Design Optimization of A Single-Axis Moems Accelerometer Based on A Grating Interferometry Cavity for Ultrahigh Sensitivity

Development of a High-Performance Microaccelerometer With Position Independent Pure-Axial Stressed Piezoresistive Beams

Simulation of SiO2-based Piezoresistive Microcantilevers

A piezoresistive micro-accelerometer with high frequency response and low transverse effect

Monolithic Integrated Micro-Opto-Electromechanical Accelerometer Based on Michelson Interferometer Structure

An In-Plane Low-Noise Accelerometer Fabricated with an Improved Process Flow

A Piezoresistive Accelerometer with a Novel Vertical Beam Structure

Micromachined Piezoresistive Accelerometers Based on an Asymmetrically Gapped Cantilever

A Novel Tri-Axial Piezoelectric MEMS Accelerometer with Folded Beams

Design of Piezoresistive Micro-Cantilever with Stress Concentration Regions

High-Performance Single-Side Fabricated (111)-Silicon Dual-Cantilever Accelerometer with Squeeze-Film Air Damping Modulation

Analysis On Twin-Mass Structure For A Piezoresistive Accelerometer

Design of a Triaxial Piezoelectric Accelerometer

Theoretical and numerical investigation of a new 3-axis SU-8 MEMS piezoresistive accelerometer

High Sensitivity MEMS Accelerometer Using PZT-Based Four L-Shaped Beam Structure

Design and Simulation of A Novel Highly Symmetrical Piezoelectric Triaxial Accelerometer

Design of a Biaxial High-G Piezoresistive Accelerometer with a Tension–Compression Structure