Abstract:Since the introduction of fast integrated circuits, semiconductor manufacturers have concentrated their efforts on reducing the size of transistors. Increased working frequencies (shorter transistors) and decreased power consumption are the goals of circuit designers working on large-scale production costs (with the lowering of supply voltage). Short channel effects (SCEs) are a side effect of transistor shrinkage. While reducing gate oxide thickness in downscaled devices, gate stack engineering is an approach that directs to an increase in leakage current (quantum tunnelling effect). SiO 2 's application as gate insulation is anticipated to result in a gradual increase in tunnelling leakage current. As a result, the market has witnessed an increase in innovative device architectures as Fin field effect transistors (FinFET). Nanosheets is a cutting-edge method that overcomes FinFET's constraints. In this study, sub-nm junction-less Gate Stack Silicon-on-Insulator (SOI) nanosheet FinFETs (NS FinFET) for both low and high levels of doping are examined. From doping concentration (ND) range of 10 16 cm-3 to 10 19 cm-3, the comprehensive DC performance evaluation is examined, including transfer characteristics, output characteristics, subthreshold swing (SS), drain induced barrier lowering (DIBL), and ION/IOFF ratio. The proposed Junction less FinFET produces better switching characteristics with IOFF getting less than nA for all the doping ranges. Furthermore, dynamic power and power consumption of the proposed JLFET is investigated. It shows paradigm shift for the semiconductor industries for low-power and high-performance applications at sub-nm region.

4H-Sic LJFET-based Power IC Using Depletion Load

Development of 4H-SiC LJFET-Based Power IC

An ultralow loss 4H-SiC double trenches MOSFET with integrated heterojunction diodes and split gate

Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs

A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance

A High-Voltage “Quasi-P-ldmos” Using Electrons As Carriers in Drift Region Applied for SPIC

Design Criteria of High-Voltage Lateral RESURF JFETs on 4H-Sic

A Low-Loss Diode Integrated SiC Trench MOSFET for Improving Switching Performance

SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance

High Voltage SOI SJ-LDMOS with Dynamic Buffer

Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode

Optimized JFET Regions of 4H-Sic VDMOS with Reduced On-Resistance and Improved Gate Oxide Reliability

High Frequency Switching of Sic High Voltage Ljfet

Electrical Characterization and Analysis of 4H-Sic Lateral MOSFET (LMOS) for High-Voltage Power Integrated Circuits

An Integrated Gate Driver Based on SiC MOSFETs Adaptive Multi-Level Control Technique

A novel high-performance junctionless 4H-SiC trench MOSFET with improved switching characteristics

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

Modeling and Design of a Monolithically Integrated Power Converter on SiC

Analysis of a High-Performance Ultra-Thin Body Ultra-Thin Box Silicon-on-insulator MOSFET with the Lateral Dual-Gates: Featuring the Suppression of the DIBL

Design and Analysis of Gate Stack Silicon-on-Insulator Nanosheet FET for Low Power Applications

An Improved SiC MOSFET-gate Driver Integrated Power Module with Ultra Low Stray Inductances