Abstract:The fabrication of self-shunted SNS (superconductor/normalconductor/superconductor) Josephson junctions for rapid single flux quantum (RSFQ) logic could potentially facilitate increased circuit density, as well as reduced parasitic capacitance and inductance over the currently used externally shunted SIS (superconductor/insulator/superconductor) trilayer junction process. We report the deposition, fabrication, and device characterization of Josephson junctions prepared with Nb1-yTiyN electrodes and TaxN barriers tuned near the metal - insulator transition, deposited on practical large-area oxide-buffered silicon wafers. When scaled to practical device dimensions, this type of junction is found to have an IcRn product of over 0.5 mV and a critical current (I-c) and normal resistance (R-n) of magnitudes suitable for single flux quantum digital circuits. A longer than expected normal-metal coherence length (xi(n)) of 5.8 nm is inferred from the thickness dependence of J(c) at 4.2 K for junctions fabricated using a barrier resistivity of 13 m Omega cm. Although not well understood and not quantitatively predicted by conventional theories, this results in a sufficiently high I-c and IcRn to make the junctions suitable for practical applications. Similar observations of unexpectedly large Josephson coupling currents in SNS junctions have been documented in other systems, particularly in cases when the barrier is near the M - I transition, and have become known as the giant proximity effect. The temperature dependence of xi(n), I-c R-n, and J(c) are also reported. For this technology to be used in practical applications, significant improvements in our fabrication process are needed as we observe large variations in I-c and R-n values across a 100 mm wafer, presumably as a result of variations in the Ta: N stoichiometry and the resulting changes in the TaxN barrier resistivity.

Parametric Characterization and Macroscopic Quantum Tunneling of $\hbox{nb}/\hbox{alo}_{\rm X}/\hbox{nb}$ Josephson Junctions

Characterization Of Josephson Tunneling Junction By Lifetime Of Zero-Voltage State And Fiske Self-Resonant Step

MEASUREMENTS ON THE SWITCHING CURRENT DISTRIBUTION OF A JOSEPHSON JUNCTION

Self-aligning fabrication and DC characterization of Nb/AlOx/Nb superconducting Josephson junctions

Fabrication and properties of Nb/Al-AlO<inf>x</inf>/Nb Josephson junctions for SQUID application

Observation of Macroscopic Quantum Tunneling in A Single Bi2sr2cacu2o8+Delta Surface Intrinsic Josephson Junction

Macroscopic Quantum Tunneling and Qubit Design Parameters of Bi2Sr2CaCu2O8+δsurface Intrinsic Josephson Junctions

Disorder and Critical Current Variability in Josephson Junctions

Single-flux-quantum circuits utilizing self-shunted NbN/TaN/NbN josephson junctions grown on silicon substrates

Intrinsically shunted NbN/TaN/NbN Josephson junctions on Si substrates for large-scale integrated circuits applications

Magnetometry with low resistance proximity Josephson junction

Phase dynamics of tunnel Al-based ferromagnetic Josephson junctions

Internally shunted Josephson junctions with barriers tuned near the metal–insulator transition for RSFQ logic applications

Aluminum Hard Mask Technique for the Fabrication of High-Quality Submicron Nb/Al-AlOx/Nb Josephson Junctions

Applications and non-idealities of submicron Al-AlOx-Nb tunnel junctions

Manifestation of geometric quantization effects in temperature behavior of AC magnetic response of Josephson Junction Arrays

Intrinsically shunted Josephson junctions with high characteristic voltage based on epitaxial NbN/TaN/NbN trilayer

Measurement of Energy Relaxation Time in A Microwave-Driven Josephson Junction

Fluctuation Dominated Josephson Tunneling with a Scanning Tunneling Microscope

Bolometric detection of Josephson inductance in a highly resistive environment