A 610GHz imager In 0.18 micron CMOS process

Chengwei Jia,Jixin Chen,Pinpin Yan
DOI: https://doi.org/10.1109/ICCPS.2014.7062374
2014-01-01
Abstract:In this paper, a 610GHz imager composed of an on-chip antenna, a NMOS direct detector and an operational amplifier in 0.18 micron standard CMOS process is proposed. To satisfy the requirements of process design rules, we make some modifications to a rectangle patch antenna without lowering its performance. Based on the principle of distributed resistive self-mixing, the detector can work beyond the cutoff frequency of the technology and facilitate broadband detection. The operational amplifier makes use of a current mirror circuit to change a differential amplifier into a single-input-single-output circuit, which not only reduces common mode noise but matches the single-end antenna. According to our simulation, the imager achieves a responsivity (Rv) of 17.6 KV/W.
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