Influence of Post-Annealing on Resistivity of VOx Thin Film

Rong-Hong Chen,Yu-Long Jiang,Bing-Zong Li
DOI: https://doi.org/10.1109/LED.2014.2326691
2014-01-01
Abstract:The influence of post-annealing (PA) on the resistivity of 55-nm VOx film (~1.2 Ω · cm) is investigated in this letter. For the first time, it is demonstrated that PA can effectively lower the film resistivity but with a constant temperature coefficient of resistance (TCR) by enhancing the formation of embedded VO2 nanocrystals (NCs), while keeping the VOx film composition unchanged. A model based on charge hopping between VO2 NCs is proposed to illustrate the relationship between the temperature-dependent resistivity and the constant TCR.
What problem does this paper attempt to address?