Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Epitaxial Growth Mechanism of Silicene on Ag(111)

Epitaxial Growth of a Silicene Sheet

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Silicene growth mechanisms on Au(111) and Au(110) substrates

Various Atomic Structures of Monolayer Silicene Fabricated on Ag(111)

Anomalous intralayer growth of epitaxial Si on Ag(111)

Coexistence of multiple silicene phases in silicon grown on Ag(111)

Resolving the Controversial Existence of Silicene and Germanene Nanosheets Grown on Graphite.

Electronic Structure Of Silicene On Ag(111): Strong Hybridization Effects

Epitaxial growth of crystalline CaF$_2$ on silicene

Emergent Dirac Fermions in Epitaxial Planar Silicene Heterostructure

Energetically Favored 2D to 3D Transition: Why Silicene Cannot Be Grown on Ag(111)

2D vibrational properties of epitaxial silicene on Ag(111)

Epitaxial growth of Si(111)/Er2O3 (111) structure on Si(111) by molecular beam epitaxy

Formation, Structures and Electronic Properties of Silicene Oxides on Ag(111)

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Exploring Ag(111) Substrate for Epitaxially Growing Monolayer Stanene: A First-Principles Study

Growth of epitaxially oriented Ag nanoislands on air-oxidized Si(111)-(7x7) surfaces: Influence of short range order on the substrate

Epitaxial growth of highly strained antimonene on Ag (111)

Electron and lattice structure of ultra thin Ag films on Si(111) and Si(001)

Silicene on Ag(111): an honeycomb lattice without Dirac bands