A CMOS Low Power K-band FMCW Radar Transceiver Front-End for AIOT Application
Shuoyang Yuan,Shengjie Wang,Jiangbo Chen,Jiabing Liu,Quanyong Li,Qizhou Yang,Qun Jane Gu,Chunyi Song,Zhiwei Xu
DOI: https://doi.org/10.1109/ims37964.2023.10187923
2023-01-01
Abstract:This paper proposes a low power K-band frequency-modulated continuous wave (FMCW) radar transceiver for Artificial Intelligence-Internet of Things (AIOT) applications, which is fabricated in 65 nm CMOS. To achieve low power consumption, a current sharing low noise amplifier (LNA) is designed with high gain, low noise, and low power consumption. A mixer biased at Class-B condition is proposed to reduce the requirement of LO driving strength, which also achieves a high conversion gain and low noise figure with low power consumption. Measurement results show the radar transceiver front-end delivers a 11.5 dBm transmitter (TX) output power, a 21-57 dB receiver (RX) conversion gain, a -37.4 dBm RX IP1dB @57 dB gain and 6.7 dB NFdsb @800 kHz across 23-25.5 GHz, while consuming 119 mW from a 1-V power supply. When under 0.75-V power supply, the radar transceiver front-end demonstrates an 8.6 dBm TX output power, a 52.6 dB RX conversion gain, a -33.1 dBm RX IP1dB and 10.2 dB NFdsb @800 kHz across 23-25.5 GHz. The transceiver chip occupies 8.5-mm 2 area including pads.