Electrical Conduction and Reliability in Dual-Layered Graphene Heterostructure Interconnects

Nikhil Jain,Michael Murphy,Robin Jacobs-Gedrim,Mariyappan Shanmugam,Fan Yang,Eui Sang Song,Bin Yu
DOI: https://doi.org/10.1109/led.2014.2360815
IF: 4.8157
2014-01-01
IEEE Electron Device Letters
Abstract:Dual-layer graphene (DLG) interconnects with hexagonal boron nitride (h-BN) as intercalated insulating layer have been demonstrated. The DLG employs graphene grown by chemical vapor deposition process with h-BN serving as a barrier preventing interlayer scattering, which degrades carrier transport in multilayer graphene. The conductive behavior in dual-layer structures is compared with monolayer graphene and randomly stacked bilayer graphene. Reduced resistance is observed in DLG, which exhibits higher current-carrying capacity and maximum power density. In addition, DLG wire is shown to be robust under constant voltage stressing (10 V) at an elevated temperature (150 degrees C) with the mean time to failure similar to 75 times higher than that of stacked bilayer graphene wires.
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