Abstract:We present the design and the test results of a dual-channel Vertical-Cavity Surface-Emitting Laser (VCSEL) driver ASIC LOCld65 for detector front-end readout. LOCld65 is designed in a commercial 65-nm CMOS technology with a power supply of 1.2 V. LOCld65 contains two separate channels with the same structure and the two channels share an I2C slave. Each channel consists of an input amplifier, four stages of limiting amplifiers (LAs), a high-current output driver, and a bias-current generator. In order to extend the bandwidth, the input amplifier uses an inductive peaking technique and the LAs use a shared inductive peaking technique. The input amplifier and the output driver each utilize a Continuous-Time Linear Equalizer (CTLE). The LAs employ active feedback. The modulation current, the bias current, the peaking strength of the CTLEs, and the feedback strength of LAs are programmable through an I2C interface. In order to protect from the radiation damage, the I2C slave is implemented with triple modular redundancy. Each channel of LOCld65 is tested to operate up to 14 Gbps with typical power dissipations (the VCSEL included) of 68.3 mW/channel and 62.1 mW/channel at the VCSEL voltages of 3.3 V and 2.5 V, respectively. LOCld65 survives 4.9 kGy(SiO2). LOCld65 is an excellent match for the serializer-deserializer ASIC lpGBT in single- or dual-channel optical transmitters in HL-LHC upgrade applications.

Design of 12-channel 120Gb/s laser diode driver array in 0.18µm CMOS technology

200 Gb/s Optical-Amplifier-Free IM/DD Transmissions Using a Directly Modulated O-Band DFB+R Laser Targeting LR Applications

A Novel Quad-Channel 10 Gbps CMOS VCSEL Array Driver with Integrated Charge Pumps

A Kind of High Bit Rate Laser Diodes Driver

A 4-Channel 10-Gbps/ch CMOS VCSEL Array Driver with on-chip Charge-pumps

Developments of Two High-speed Dual-channel VCSEL Driver ASICs

A 32Gb/s-NRZ, 15GBaud/s-PAM4 DFB laser driver with active back-termination in 65nm CMOS

A 16gb/s Triple-Mode Driver in 0.18μm CMOS Technology

Eight-wavelength distributed-Bragg-reflector (DBR) laser array transmitter for WDM applications

A laser source driver in 0.18 μm SiGe BiCMOS technology for high speed quantum key distribution

A laser source driver in 0.18 <i></i>m SiGe BiCMOS technology for high speed quantum key distribution

DC～3 Gb/s LD/EA Drivers Using Discrete Double Polysilicon Bipolar Transistors

5 × 20 Gb/s III-V on Silicon Electroabsorption Modulator Array Heterogeneously Integrated with a 1.6nm Channel-Spacing Silicon AWG

A Directly Modulated Laterally Coupled Distributed Feedback Laser Array Based on SiO2 Planarization Process

Design of VCSEL Driver Based on 0.13 μm SOI COMS Process

LOCld65, A Dual-Channel VCSEL Driver ASIC For Detector Front-End Readout

An 800G Integrated Silicon-Photonic Transmitter based on 16-Channel Mach-Zehnder Modulator and Co-Designed 5.35pJ/bit CMOS Drivers.

Experimental Demonstration of Monolithically Integrated 16 Channel Dfb Laser Array Fabricated by Nanoimprint Lithography with Awg Multiplexer and Soa for Wdm-Pon Application

112 Gbit/s Transmitter Optical Subassembly Based on Hybrid Integrated Directly Modulated Lasers

DFB Laser Array Monolithically Integrated with MMI Combiner and SOA