Abstract:Spin-transfer torque random access memory (STT-RAM) is a promising nonvolatile memory technology aiming on-chip or embedded applications. In recent years, many researches have been conducted to improve the storage density and enhance the scalability of STT-RAM, such as reducing the write current and switching time of magnetic tunneling junction (MTJ) devices. In parallel with these efforts, the continuous increasing of tunnel magneto-resistance(TMR) ratio of the MTJ inspires the development of multi-level cell (MLC) STT-RAM, which allows multiple data bits be stored in a single memory cell. Two types of MLC STT-RAM cells, namely, parallel MLC and series MLC, were also proposed. The storage margin of a MLC STT-RAM cell, i.e., the distinction between the lowest and highest resistance states, is partitioned into multiple segments for multi-level data representation. As a result, the performance and reliability of MLC STT-RAM cells become more sensitive to the MOS and MTJ device variations and the thermal-induced randomness of MTJ switching. In this work, we systematically analyze the variation sources of MLC STT-RAM designs and their impacts on the reliability of the read and write operations. On top of that, we also discuss the optimal device parameters of the MLC MTJ for the minimization of the operation error rate of the MLC STT-RAM cells from statistical design perspective. Our simulation results show that under the current available technology, series MLC STT-RAM demonstrates overwhelming benefits in the read and write reliability compared to parallel MLC STT-RAM and could potentially satisfy the requirement of commercial practices.

DFSTT-MRAM: Dual Functional STT-MRAM Cell Structure for Reliability Enhancement and 3-D MLC Functionality

Multi-level Cell STT-RAM: is It Realistic or Just a Dream?

ADAMS: Asymmetric differential STT-RAM cell structure for reliable and high-performance applications

Complementary-Magnetization-Switching Perpendicular Spin-Orbit Torque Random-Access Memory Cell for High Read Performance

DSTT-MRAM: Differential Spin Hall MRAM for On-chip Memories

Area-Efficient 1T-2D-2MTJ SOT-MRAM Cell for High Read Performance

A Novel 3D 2TnC FeRAM Architecture and Operation Scheme with Improved Disturbance for High-Bit-Density Dynamic Random-Access Memory

RAM and TCAM Designs by Using STT-MRAM

Optimization of the 3D multi-level SOT-MRAMs

Access scheme of Multi-Level Cell Spin-Transfer Torque Random Access Memory and its optimization

TriZone: A Design of MLC STT-RAM Cache for Combined Performance, Energy, and Reliability Optimizations

Design and Simulation Analysis of a 3TnC MLC FeRAM Using a Nondestructive Readout and Offset-Canceled Sense Amplifier for High-Density Storage Applications

3T2M Canted-Type X SOT-MRAM: Field-free, High-Energy-efficiency, and High-Read-margin Memory Toward Cache Applications

A 3D RRAM Using a Stackable Multi-Layer 1TXR Cell.

High-Density 1R/1W Dual-Port Spin-Transfer Torque MRAM

A 1-Mb 28-Nm 1T1MTJ STT-MRAM with Single-Cap Offset-Cancelled Sense Amplifier and in Situ Self-Write-Termination

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

Two-step State Transition Minimization for Lifetime and Performance Improvement on MLC STT-RAM.

A Novel Architecture Of The 3d Stacked Mram L2 Cache For Cmps

Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling

Architectural Exploration to Enable Sufficient MTJ Device Write Margin for STT-RAM Based Cache