Submicrometer Epsilon-Near-Zero Electroabsorption Modulators Enabled by High-Mobility Cadmium Oxide
Salvatore Campione,Michael G. Wood,Darwin K. Serkland,S. Parameswaran,Jon Ihlefeld,T. S. Luk,Joel R. Wendt,Kent M. Geib,Gordon A. Keeler
DOI: https://doi.org/10.1109/jphot.2017.2723299
IF: 2.4
2017-08-01
IEEE Photonics Journal
Abstract:Epsilon-near-zero materials provide a new path for tailoring light-matter interactions at the nanoscale. In this paper, we analyze a compact electroabsorption modulator based on epsilon-near-zero confinement in transparent conducting oxide films. The nonresonant modulator operates through field-effect carrier density tuning. We compare the performance of modulators composed of two different conducting oxides, namely, indium oxide (In2O3 ) and cadmium oxide (CdO), and show that better modulation performance is achieved when using high-mobility (i.e., low loss) epsilon-near-zero materials such as CdO. In particular, we show that nonresonant electroabsorption modulators with submicron lengths and greater than 5 dB extinction ratios may be achieved through the proper selection of high-mobility transparent conducting oxides, opening a path for device miniaturization and increased modulation depth.
engineering, electrical & electronic,optics,physics, applied