Graphene Coated ZnO Nanowire Optical Waveguides.

Bigeng Chen,Limin Tong

DOI: https://doi.org/10.1364/oe.22.024276

IF: 3.8

2014-01-01

Optics Express

Abstract:Using a tape-assist-transfer method and micromanipulation, we have fabricated graphene coated ZnO nanowire (GZN) optical waveguides. The GZNs exhibit significant saturable absorption (differential transmission of 15% at 1064nm), which can be employed for optical modulation.

What problem does this paper attempt to address?

Graphene-doped polymer nanofibers for low-threshold nonlinear optical waveguiding

Chao Meng,Shao-Liang Yu,Hong-Qing Wang,Yue Cao,Li-Min Tong,Wei-Tao Liu,Yuen-Ron Shen

DOI: https://doi.org/10.1038/lsa.2015.121

2015-01-01

Abstract:Graphene-doped polymer nanofibers are fabricated by taper drawing of solvated polyvinyl alcohol doped with liquid-phase exfoliated graphene flakes. Nanofibers drawn this way typically have diameters measured in hundreds of nanometers and lengths in tens of millimeters; they show excellent uniformity and surface smoothness for optical waveguiding. Owing to their tightly confined waveguiding behavior, light–matter interaction in these subwavelength-diameter nanofibers is significantly enhanced. Using approximately 1350-nm-wavelength femto-second pulses, we demonstrate saturable absorption behavior in these nanofibers with a saturation threshold down to 0.25 pJ pulse −1 (peak power ∼1.3 W). Additionally, using 1064-nm-wavelength nanosecond pulses as switching light, we show all-optical modulation of a 1550-nm-wavelength signal light guided along a single nanofiber with a switching peak power of ∼3.2 W.
Graphene-Doped Polymer Optical Nanofibers

Chao Meng,Limin Tong

DOI: https://doi.org/10.1364/cleo_qels.2013.qth1b.6

2013-01-01

Abstract:By means of doping the initial dissolved polymer, we have successfully fabricated optical-quality graphene-doped polymer nanofibers by a physical drawing technique. Using a waveguiding scheme, single graphene-doped polymer nanofibers exhibit broadband saturable absorbance (transmission change similar to 10%). (C) 2010 Optical Society of America
Non-aligned ZnO Nanowires Composited with Reduced Graphene Oxide and Single-Walled Carbon Nanotubes for Highly Responsive UV–visible Photodetectors

Changsong Chen,Shaoda Zhang,Baofa Hu,Haisheng San,Zhengdong Cheng,Werner Hofman

DOI: https://doi.org/10.1016/j.compositesb.2019.01.087

IF: 11.322

2019-01-01

Composites Part B Engineering

Abstract:A comprehensive comparison study of the UV-visible photoresponse properties of non-aligned carbothermal ZnO nanowires (ZNWs) composited with reduced graphene oxide (RGO) and single-walled carbon nanotubes (SWCNTs) is presented. The RGO/ZNWs composites (GZWs) and SWCNTs/ZNWs composites (CZWs) have been successfully synthetized through UV-assisted photochemical reduction of GO in ZNWs suspension and ultrasonic stirring technology, respectively. The optimal contents of RGO and SWCNTs incorporated into ZNWs were determined for achieving maximum photoresponse, respectively. Experimentally, the optimal GZWs and CZWs exhibit significant enhancement in photoelectric properties than pure ZNWs, It is demonstrated that the GZWs-based photodetector has higher photoresponsivity (similar to 16 AW(-1)) than CZWs-based photodetector under low UV irradiation (< 10 mu W cm(-2)) and at 1.0V bias, while the CZWs-based photodetector has higher on/off current ratio (8.41 x 10(4)) and faster response time (1.99 s of rise-time and 0.39 s of decay-time) than GZWs-based one. The detail physics mechanism on the effects of RGO and SWCNTs on photoelectric characteristics of ZNWs is presented with the interface charge transfer due to the chemisorption and photo-desorption of oxygen.
Optical Waveguide Based on ZnO Nanowires Prepared by a Thermal Evaporation Process

D. Y. Jiang,J. X. Zhao,M. Zhao,Q. C. Liang,S. Gao,J. M. Qin,Y. J. Zhao,A. Li

DOI: https://doi.org/10.1016/j.jallcom.2012.03.114

IF: 6.2

2012-01-01

Journal of Alloys and Compounds

Abstract:Zinc oxide (ZnO) nanowires were synthesized on Si substrates through thermal evaporation of Zn powders. The morphology of the nanowires was examined by scanning electron microscopy (SEM), and they were also characterized to be hexagonal wurtzite structure by Raman measurement. The photoluminescence (PL) spectra were obtained and the waveguide behavior was demonstrated, which based on the axial Fabry-Perot resonator mode in the nanowire. Published by Elsevier B.V.
Fabrication and Characterization of Β-Ga2o3 Optical Nanowires

F Wang,ZH Han,LM Tong

DOI: https://doi.org/10.1016/j.physe.2005.08.001

IF: 3.369

2005-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:Monoclinic gallium oxide (β-Ga2O3) nanowires with lengths of tens of micrometers and diameters ranging from 100 to 250nm are synthesized using simple physical evaporation based on vapor–liquid–solid (VLS) mechanism. The as-synthesized straight β-Ga2O3 nanowires show excellent diameter uniformity and sidewall smoothness, making them suitable for optical wave-guiding. Light from a fiber taper is launched into the nanowire by means of evanescent coupling. Measured propagation loss of the nanowire at 633nm wavelength is on the order of 10dB/mm. Favorable mechanical strength of these nanowires for elastic bending is also observed. Our results suggest that β-Ga2O3 nanowires are promising building blocks for micro- and nanophotonic circuits and devices.
Characteristics of Electro-Refractive Modulating Based on Graphene-Oxide-Silicon Waveguide

Chao Xu,Yichang Jin,Longzhi Yang,Jianyi Yang,Xiaoqing Jiang

DOI: https://doi.org/10.1364/oe.20.022398

IF: 3.8

2012-01-01

Optics Express

Abstract:Graphene has attracted a high level of research interest because of its outstanding electronic transport properties and optical properties. Based on the Kubo formalism and the Maxwell equations, it's demonstrated that the optical conductivity of graphene can be controlled through the applied voltage. And we find that the graphene-oxide-silicon (GOS) based waveguide can be made into either the electro-absorptive or electron-refractive modulators. Using graphene as the active medium, we present a new electro-refractive Mach-Zender interferometer based on the GOS structure. This new GOS-based electron-refractive modulation mechanism can enable novel architectures for on-chip optical communications.
Nonlinear Optical and Multi-Photon Absorption Properties in Graphene–zno Nanocomposites

Qing Tong,Yu-Hua Wang,Xiang-Xiang Yu,Bo Wang,Zhuang Liang,Meng Tang,An-Shun Wu,Hai-Jun Zhang,Feng Liang,Ya-Feng Xie,Jun Wang

DOI: https://doi.org/10.1088/1361-6528/aaac13

IF: 3.5

2018-01-01

Nanotechnology

Abstract:Graphene-ZnO (GZO) nanocomposites were synthesized by a modified solvothermal method, and characterized by transmission electron microscopy, x-ray diffraction, Raman spectra, and UV-vis absorption spectra. The controllable nonlinear optical (NLO) properties of as-prepared GZO nanocomposites were tested by an open-aperture Z-scan method with 1030 nm fs laser pulses; the tested results showed that there were five-photon absorption (5PA) at 46.8 GW cm-2, 3PA at 28.1 GW cm-2, 2PA at 18.7 GW cm-2, and a vital change from saturable absorption (SA) to reverse SA (RSA) with the increase of incident intensity. This was the first time that 5PA was found in GZO nanocomposites at such a low intensity, 46.8 GW cm-2. The tunable NLO property from SA to RSA and controllable multi-photon absorption provided a facile approach for their applications in optical, optoelectronic devices, and information storage.
SPP Waveguide of CdS Nanowires and Graphene Nanobelts

Jun Zhu,Zhengjie Xu,Wenju Xu,Yunbai Qin,Duqu Wei

DOI: https://doi.org/10.1016/j.ijleo.2017.10.069

IF: 3.1

2018-01-01

Optik

Abstract:Graphene has potential to replace germanium as compound semiconductor for high-performance devices because of its unique optoelectronic properties and availability of existing integrated circuit manufacturing technology. This study investigates surface plasmon polariton (SPP) waveguide-based interaction between CdS nanowires and graphene nanobelts to determine shortcomings of the existing technology. The structure uses MgF2 as cladding, which symmetrically covers CdS nanowires and graphene nanobelts. An air gap of same width is etched in middle of CdS nanowires and graphene nanobelts. SPP is optically excited. Gain compensation is obtained through coupling effect of nanowires, capacitance-enhanced effect of air gap and GaAs semiconductor material, and low refractive index of buffer layer to reduce transmission loss. The structure can achieve strong photon localization and easily implement low threshold for nanometer laser. Experiments on characteristics of SPP show that increasing air gap width of structure reduces transmission loss and increases limiting factors. Limiting factor of waveguide structure is less than 0.15, which indicates ultra-deep subwavelength constraints. SPP waveguide can be integrated with various nanophotonic and electronic devices and has broad application prospects in optical sensing, optical communication, and other fields.
Growth And Characterization Of Cu-Catalyzed Zno Nanowires

Y. M. Zhao,Y. H. Li,Y. Z. Jin,X. P. Zhang,W. B. Hu,I. Ahmad,G. Mccartney,Y. Q. Zhu

DOI: https://doi.org/10.1088/1742-6596/61/1/141

2007-01-01

Abstract:Cu-catalyzed ZnO nanowires have been synthesized by thermal evaporation of Cu-Zn powder alloys in a water vapor atmosphere. The diameters of the nanowires can be controlled by the amount of water vapor introduced into in the reaction tube. Raman spectroscopic characterization reveals two additional modes at 621 and 671cm(-1) which are indicative of the existence of host-lattice defects caused by Cu doping or other intrinsic lattice defects that formed during the nanowire growth. Field emission and photoluminescence (PL) properties of Cu-catalyzed ZnO nanowires have also been investigated using nanowires with a diameter of 20 nm and 200 nm. The field emission results show that the thinner nanowires have a lower turn-on electrical field than the thicker ones, whilst both nanowires exhibit a similar field emission enhancement factor in the high electric field region. In the PL spectra, we have observed a blue-shift of the UV emission peak and a red-shift of the green emission peak when the nanowire diameters decreased from 200 nm to 20 nm.
Green Light-Emitting Diode Based on Graphene-Zno Nanowire Van Der Waals Heterostructure

Zhiqian Wu,Yue Shen,Xiaoqiang Li,Qing Yang,Shisheng Lin

DOI: https://doi.org/10.1007/s12200-016-0596-1

2016-01-01

Frontiers of Optoelectronics

Abstract:The rectifying behavior between graphene and semiconductors makes novel type of solar cells, photodetectors and light emitting diodes (LEDs). The interface between graphene and ZnO is the key for the performance of the optoelectronic devices. Herein, we find that green light emission is very strong for the forward biased graphene/ZnO nanowire van der Waals heterostructure. We correlated the green light emission with the surface defects locating at the ZnO nanowire surface through the detailed high resolution transmission electron microscopy and photoluminescence measurements. We pointed out engineering the surface of ZnO nanowires could bring a dimension of designing graphene/ZnO LEDs, which could be extended to other types of graphene/semiconductor heterostructure based optoelectronic devices.
Synthesis of ZnO Nanowires for Thin Film Network Transistors

S. H. Dalal,H. E. Unalan,Y. Zhang,Pritesh Hiralal,L. Gangloff,Andrew J. Flewitt,Gehan A. J. Amaratunga,William I. Milne

DOI: https://doi.org/10.1117/12.799598

2008-01-01

Abstract:Zinc oxide nanowire networks are attractive as alternatives to organic and amorphous semiconductors due to their wide bandgap, flexibility and transparency. We demonstrate the fabrication of thin film transistors (TFT)s which utilize ZnO nanowires as the semiconducting channel. These thin film transistors can be transparent and flexible and processed at low temperatures on to a variety of substrates. The nanowire networks are created using a simple contact transfer method that is easily scalable. Apparent nanowire network mobility values can be as high as 3.8 cm(2)/VS (effective thin film mobility: 0.03 cm(2)/VS) in devices with 20 mu m channel lengths and ON/OFF ratios of up to 10(4).
Field Emission and Optical Properties of Ga-doped ZnO Nanowires Synthesized Via Thermal Evaporation

Li Wei Chang,Jien Wei Yeh,Chia Liang Cheng,F. S. Shieu,Han C. Shih

DOI: https://doi.org/10.1016/j.apsusc.2010.11.145

IF: 6.7

2011-01-01

Applied Surface Science

Abstract:Ga-doped ZnO (GZO) nanowires have been synthesized by thermal evaporation with gallium metal as the dopant source. The morphology, microstructure and chemical composition were determined by field emission scanning electron microscopy (FE-SEM), X-ray diffraction, high-resolution transmission electron microscopy (HRTEM), electron paramagnetic resonance (EPR), and X-ray photoelectron spectroscopy (XPS). The investigation confirmed that the GZO nanowires were the wurtzite hexagonal structures. These doped nanowires have diameters in the range 30-70 nm and lengths of several hundreds of nanometers with growth direction along the (1 0 0) crystal plane. The optical properties from the cathodoluminescence (CL) and photoluminescence (PL) spectrum show that GZO nanowires exhibit a relative weak ultraviolet emission (UV) and a strong green emission. The UV emission for ZnO and GZO nanowires is attributed to near band-edge emission from recombination of free excitons. Furthermore, the green emission is attributed to oxygen vacancy and gallium impurity energy levels. Field emission measurements demonstrate that the GZO possesses good performance with a turn-on field of 3.4 V/mu m at a current density of 10 mu A/cm(2), a threshold field of 5.4 V/mu m at a current density of 1 mA/cm(2), and a field-enhancement factor beta of 5945. These results are very helpful for the design, fabrication and optimization of integrated optoelectronic nanodevices using GZO nanowires. (C) 2010 Elsevier B.V. All rights reserved.
Optoelectronic Properties Of Single-Crystalline Zn2geo4 Nanowires

chihung liao,chunwei huang,juiyuan chen,chunghua chiu,tzungchuen tsai,kuochang lu,mingyen lu,wenwei wu

DOI: https://doi.org/10.1021/jp500830x

2014-01-01

Abstract:In this work, Zn2GeO4 nanowires (NWs) were successfully synthesized on Si(100) substrates through carbon thermal reduction and a vapor liquid solid method. The NWs were of around 100 nm diameter and high aspect ratio (AR > 150). High-resolution transmission electron microscopy studies indicate that the NWs are single-crystalline with [110] growth direction. Moreover, the atomic resolution high-angle annular dark-field and bright-field images of scanning transmission electron microscopy have distinguished the different elements. They also further identified the structure of Zn2GeO4 and located the positions of the elements. Additionally, we have fabricated devices and measured the electrical properties of a single NW. It is remarkable that individual Zn2GeO4 NW devices exhibited excellent optoelectronic properties with fast switching speed under 254 nm UV illuminations. Furthermore, with short wavelength UV illumination, as we soaked Zn2GeO4 NWs in methyl orange solution, the methyl orange was degraded. Therefore, Zn2GeO4 NWs have potential applications in UV photodetectors and degradation of organic pollutants.
Synthesis and electrical properties of ZnO nanowires.

Xiaoyan Xing,Kaibo Zheng,Huahua Xu,Fang Fang,Haoting Shen,Jing Zhang,Jian Zhu,Chunnuan Ye,Guanying Cao,Dalin Sun,Guorong Chen

DOI: https://doi.org/10.1016/j.micron.2005.10.010

IF: 2.381

2006-01-01

Micron

Abstract:Vertically aligned ZnO nanowires were synthesized on the p+ silicon chip by modifying the CVD process with a vapor trapping design. Scanning electron microscopy was used to investigate the morphology of as-obtained nanowires. X-ray diffraction showed that the obtained nanowires were ZnO crystalline. The rectifying characteristics of the p–n heterojunction composed of ZnO nanowires and a p+ silicon chip were observed. The positive turn-on voltage was 0.5V and the reverse saturation current was 0.01mA. These vertically aligned ZnO nanowires showed a low field emission threshold of 4V/μm at a current density of 0.1μA/cm2. The dependence of emission current density on the electric field followed Fowler–Nordheim relationship.
Facile zinc oxide nanowire growth on graphene via a hydrothermal floating method: towards Debye length radius nanowires for ultraviolet photodetection

Brent Cook,Qingfeng Liu,Jianwei Liu,Maogang Gong,Dan Ewing,Matthew Casper,Alex Stramel,Judy Wu

DOI: https://doi.org/10.1039/c7tc03325g

2017-01-01

J. Mater. Chem. C

Abstract:Heterojunction nanohybrid zinc oxide nanowires on graphene (ZnO-NW/graphene) combines crystalline ZnO-NWs with high charge mobility of graphene to provide a platform for high-performance devices.
Synthesis and Electrical Properties of ZnO Nanowires

Xiaoyan Xing,Kaibo Zheng,Huahua Xu,Fang,Haoting Shen,Jing Zhang,Jian Zhu,Chunnuan Ye,Guanying Cao,Dalin Sun,Guorong Chen

DOI: https://doi.org/10.1016/j.micron.2005.10.010

IF: 2.381

2006-01-01

Micron

Abstract:Vertically aligned ZnO nanowires were synthesized on the p+ silicon chip by modifying the CVD process with a vapor trapping design. Scanning electron microscopy was used to investigate the morphology of as-obtained nanowires. X-ray diffraction showed that the obtained nanowires were ZnO crystalline. The rectifying characteristics of the p–n heterojunction composed of ZnO nanowires and a p+ silicon chip were observed. The positive turn-on voltage was 0.5 V and the reverse saturation current was 0.01 mA. These vertically aligned ZnO nanowires showed a low field emission threshold of 4 V/μm at a current density of 0.1 μA/cm2. The dependence of emission current density on the electric field followed Fowler–Nordheim relationship.
Facile Synthesis of Highly Uniform Mn/Co-codoped ZnO Nanowires: Optical, Electrical, and Magnetic Properties.

Huifeng Li,Yunhua Huang,Qi Zhang,Yi Qiao,Yousong Gu,Jing Liu,Yue Zhang

DOI: https://doi.org/10.1039/c0nr00644k

IF: 6.7

2010-01-01

Nanoscale

Abstract:In this article, Co/Mn-codoped ZnO nanowires (NWs) were successfully synthesized on a silicon substrate by the thermal evaporation method with Au catalyst. The X-ray diffraction pattern indicated that the Co/Mn-codoped ZnO NWs are a hexagonal wurtzite structure without a second phase, and energy dispersive X-ray spectroscopy revealed that the Co and Mn ions were introduced into the ZnO NWs with the content of ∼0.8 at% and ∼1.2 at%, respectively. Photoluminescence spectra and Raman spectra showed that the Co/Mn were doped into the NWs and resulted in the shift of the near-band-edge emission. Moreover, the novel Raman peak at 519.3 cm(-1) has suggested that the two kinds of cations via doping could affect the local polarizability. Compared with the undoped ZnO NW, the electrical measurement showed that the Co/Mn-codoping enhanced the conductivity by an order of magnitude due to the presence of Co, Mn cations. The electron mobility and carrier concentration of a fabricated field effect transistor (FET) device is 679 cm2 V(-1) s(-1) and 2×10(18) cm(-3), respectively. Furthermore, the M-H curve demonstrated that the Co/Mn-codoped ZnO NWs have obvious ferromagnetic characteristics at room temperature. Our study enhances the understanding of the novel performances of transition-metal codoped ZnO NWs and also provides a potential way to fabricate optoelectronic devices.
Graphene plasmon enhanced photoluminescence in ZnO microwires.

Ya‐Qing Bie,Jie Meng,Z. Liao,Ren Liu,D. Yu,Xuewen Fu

DOI: https://doi.org/10.1039/c3nr01226c

IF: 6.7

2013-06-10

Nanoscale

Abstract:We report the temperature dependent photoluminescence (PL) properties of monolayer graphene-Au-nanoparticle-ZnO (GAZ) microwire hybrid structures. By comparing with the bare ZnO wire without coverage of graphene, a three times enhancement of PL was found in the GAZ hybrid structures. The enhancement is attributed to the coupling between the PL photons from ZnO and the graphene surface plasmons with ~1-2 nm Au as a corrugated surface. Our results may be valuable for designing graphene-ZnO hybrid based optical and photoelectrical devices.

Medicine,Materials Science,Physics
Synthesis and Characterization of ZnO Nanowires Using a Simple PVD Approach Without Catalysts

LS Wang,X Zhang,FH Zeng

DOI: https://doi.org/10.4028/www.scientific.net/msf.475-479.3535

2005-01-01

Materials Science Forum

Abstract:Two kinds of ZnO nanowires with different morphologies and characters were produced on Si (100) using a new PVD approach by heating and oxidizing Zn powders directly without any catalysts. The nanowires have an average diameter of 80nm (deposited at the evaporation source) and 30nm (deposited downstream of the evaporation source) respectively, and are evenly distributed over an area of > 20mm2. The two nanowires have complete different photoluminescence properties. One has a strong green emission (510nm) with a weak UV emission (380nm). The other has a strong and sharp UV emission (385nm), showing the capability for UV laser emitters.
Progress on Waveguide-Integrated Graphene Optoelectronics

Jiaqi Wang,Zhenzhou Cheng,Xuejin Li

DOI: https://doi.org/10.1155/2018/9324528

2018-01-01

Advances in Condensed Matter Physics

Abstract:Graphene, a single layer of carbon atoms arranged in the form of hexagonal lattice, has many intriguing optical and electrical properties. However, due to the atomic layer thickness, light-matter interactions in the monolayer graphene are naturally weak when the light is normally incident to the material. To overcome this challenge, waveguide-integrated graphene optoelectronic devices have been proposed and demonstrated. In such coplanar configurations, the propagating light in the waveguide can significantly interact with the graphene layer integrated on the surface of the waveguide. The combination of photonic integrated circuits and graphene also enables the development of graphene devices by using silicon photonic technology, which greatly extends the scope of graphene’s application. Moreover, the waveguide-integrated graphene devices are fully CMOS-compatible, which makes it possible to achieve low-cost and high-density integration in the future. As a result, the area has been attracting more and more attention in recent years. In this paper, we introduce basic principles and research advances of waveguide-integrated graphene optoelectronics.

Graphene Coated ZnO Nanowire Optical Waveguides.

Graphene-doped polymer nanofibers for low-threshold nonlinear optical waveguiding

Graphene-Doped Polymer Optical Nanofibers

Non-aligned ZnO Nanowires Composited with Reduced Graphene Oxide and Single-Walled Carbon Nanotubes for Highly Responsive UV–visible Photodetectors

Optical Waveguide Based on ZnO Nanowires Prepared by a Thermal Evaporation Process

Fabrication and Characterization of Β-Ga2o3 Optical Nanowires

Characteristics of Electro-Refractive Modulating Based on Graphene-Oxide-Silicon Waveguide

Nonlinear Optical and Multi-Photon Absorption Properties in Graphene–zno Nanocomposites

SPP Waveguide of CdS Nanowires and Graphene Nanobelts

Growth And Characterization Of Cu-Catalyzed Zno Nanowires

Green Light-Emitting Diode Based on Graphene-Zno Nanowire Van Der Waals Heterostructure

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Field Emission and Optical Properties of Ga-doped ZnO Nanowires Synthesized Via Thermal Evaporation

Optoelectronic Properties Of Single-Crystalline Zn2geo4 Nanowires

Synthesis and electrical properties of ZnO nanowires.

Facile zinc oxide nanowire growth on graphene via a hydrothermal floating method: towards Debye length radius nanowires for ultraviolet photodetection

Synthesis and Electrical Properties of ZnO Nanowires

Facile Synthesis of Highly Uniform Mn/Co-codoped ZnO Nanowires: Optical, Electrical, and Magnetic Properties.

Graphene plasmon enhanced photoluminescence in ZnO microwires.

Synthesis and Characterization of ZnO Nanowires Using a Simple PVD Approach Without Catalysts

Progress on Waveguide-Integrated Graphene Optoelectronics