Abstract:The sparse arrangement of atoms on the high‐index copper surface leads to weak interfacial coupling with growing graphene. The strength of interfacial coupling essentially determines the amount and dispersion of graphene orientation, and thus it is expected that precise control of mono‐ and multilayer graphene growth can be achieved by modulating the interfacial coupling. Controlled and precise synthesis of materials has been a central pursuit in academia and industry. With the rise of twistronics research, there is growing demand for synthesizing orientation‐controlled 2D materials with atomic precision. Previous theories for 2D materials can predict graphene (Gr) growth on low‐index metal substrates but fail to explain the discrete orientations on most high‐index substrates, inconsistent with experimental data. Using density functional theory (DFT) and ab‐initio molecular dynamics (AIMD), this study explores graphene growth on high‐index substrates, showing that atomic steps do not dominate in trapping C atoms or driving preferential graphene nucleation at high temperatures. Thus, the possibility of intrinsic atomic steps in inducing graphene orientation on high‐index substrates is ruled out. Interfacial coupling strength between graphene and substrates is quantified using a close contact index (CCI), linking atomic structure and electronic states. The coupling between graphene and high‐index Cu surfaces is generally weak, reducing substrate anchoring and increasing graphene orientation dispersion. The extension of this theory to bilayer graphene (BLG) reveals competition between Gr/Cu interfacial coupling and Gr/Gr interlayer coupling, offering insights for controlling twist angles. This theory explains the discrete orientations on high‐index substrates, providing a theoretical basis for synthesizing orientation‐controlled graphene.

Unusual role of epilayer-substrate interactions in determining orientational relations in van der Waals epitaxy.

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Aligned Growth of Hexagonal Boron Nitride Monolayer on Germanium

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Growth of Polar Hexagonal Boron Nitride Monolayer on Nonpolar Copper with Unique Orientation.

Relationship between graphene nucleation density and epitaxial growth orientation on Cu(111) surfaces

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Controlling the Orientations of H-Bn During Growth on Transition Metals by Chemical Vapor Deposition

Interfacial Coupling Induced Discrete Orientation of Epitaxial Graphene on High‐Index Cu Substrates

Single-crystal two-dimensional material epitaxy on tailored non-single-crystal substrates

Strong Adlayer-Substrate Interactions "break" the Patching Growth of H-Bn Onto Graphene on Re(0001).

How Graphene Islands Are Unidirectionally Aligned on the Ge(110) Surface.

Toward Epitaxial Growth of Misorientation-Free Graphene on Cu(111) Foils

Revealing the Interlayer Orientations for Bilayer Graphene Grown on Hexagonal Boron Nitride by C-Afm Measurement

Orientational Epitaxy of Van Der Waals Molecular Heterostructures

Atomic Insights into the Unidirectional Alignment and Orientation-Pinning Behavior of h-BN Nucleation on Ir(111)

Full orientation control of epitaxial MoS2 on hBN assisted by substrate defects

Stacking Relations and Substrate Interaction of Graphene on Copper Foil

Relating the Orientation of Graphene on Cu Grains by Euler Angles

Epitaxial Growth of 2D Materials on High‐Index Substrate Surfaces

Direct observation of layer-stacking and oriented wrinkles in multilayer hexagonal boron nitride