Band structure engineering and defect control of Ta3N5 for efficient photoelectrochemical water oxidation
Yequan Xiao,Chao Feng,Jie Fu,Faze Wang,Changli Li,Viktoria F. Kunzelmann,Chang-Ming Jiang,Mamiko Nakabayashi,Naoya Shibata,Ian D. Sharp,Kazunari Domen,Yanbo Li
DOI: https://doi.org/10.1038/s41929-020-00522-9
IF: 37.8
2020-10-12
Nature Catalysis
Abstract:Ta<sub>3</sub>N<sub>5</sub> is a promising photoanode material with a theoretical maximum solar conversion efficiency of 15.9% for photoelectrochemical water splitting. However, the highest applied bias photon-to-current efficiency achieved so far is only 2.72%. To bridge the efficiency gap, effective carrier management strategies for Ta<sub>3</sub>N<sub>5</sub> photoanodes should be developed. Here, we propose to use gradient Mg doping for band structure engineering and defect control of Ta<sub>3</sub>N<sub>5</sub>. The gradient Mg doping profile in Ta<sub>3</sub>N<sub>5</sub> induces a gradient of the band edge energetics, which greatly enhances the charge separation efficiency. Furthermore, defect-related recombination is significantly suppressed due to the passivation effect of Mg dopants on deep-level defects and, more importantly, the matching of the gradient Mg doping profile with the distribution of defects within Ta<sub>3</sub>N<sub>5</sub>. As a result, a photoanode based on the gradient Mg-doped Ta<sub>3</sub>N<sub>5</sub> delivers a low onset potential of 0.4 V versus that of a reversible hydrogen electrode and a high applied bias photon-to-current efficiency of 3.25 ± 0.05%.
chemistry, physical