Abstract:Coexistence of localized and extended excitations is central to the macroscopic properties of correlated materials. For 5d transition-metal compounds, electron correlations alone generally do not lead to a metal -insulator (Mott) transition, with insulating behavior usually resulting from their coupling with magnetic ordering and/or structural distortions. 1T-TaS2 is a prototypical example of such correlated insulating behavior, with a high-symmetry metallic phase transforming into a distorted, charge-density wave (CDW) insulating state at low temperatures. The nature of the insulating phase as well as the existence and relevance of the localized electron physics remains debated. We resolve this standing controversy in 1T-TaS2 combining resonant inelastic x-ray spectroscopy and first-principles calculations. We observe five electronic excitations arising from the interband transitions of the Ta 5d orbitals and the S 3p ligand state, with none of the excitations on the order of the Mott gap. These excitations cannot be explained within the framework of standard multiplet calculations that assume a localized wave function, but instead, are captured by a band-theory framework accounting for the low symmetry of the crystal field in the CDW state. Our findings suggest that the electronic properties of 1T-TaS2 are dominated in the visible by both plasmonic quasiparticles and interband transitions, with no resonance associated with a putative Mott transition observed in the 0-3 eV energy range. Our discovery provides insights into the electron localization and the Mott vs band-insulator debate in 1T-TaS2 and other transition-metal materials.

The Ground Electronic State of TiS2: Experimental and Theoretical Studies

Pressure-modulated Lattice Structural Evolution in TiS2.

Pressure-modulated lattice structural evolution in TiS 2

First-Principles Investigation of the Band Structure of S-Doped TiO2

Defects Controlled Doping and Electrical Transport in TiS2 Single Crystals

Transport phenomena of TiCoSb: Defects induced modification in structure and density of states

Pressure-Induced Anomalous Enhancement of Insulating State and Isosymmetric Structural Transition in Quasi-One-Dimensional Tis3

Electronic and bonding properties of TiB2

Band-Structure, Intercalation, And Interlayer Interactions Of Transition-Metal Dichalcogenides - Tis2 And Litis2

Semimetal-to-semimetal Charge Density Wave Transition in 1T-Tise(2).

Unveiling the Electronic Inhomogeneity and Pseudogap in Transition Metal Dichalcogenide 1T-Tise2

Strongly Correlated Effect in TiS2

Electronic structure and low-temperature thermoelectric transport of TiCoSb single crystals

Electron Interaction-Driven Insulating Ground State In Bi2se3 Topological Insulators In The Two-Dimensional Limit

Dynamics of electronic states in the insulating Intermediate surface phase of 1T-TaS$_2$

Electronic and Optical Properties of a Novel Two-Dimensional Semiconductor Material TlPt2S3: a First-Principles Study

Visualizing the evolution from Mott insulator to Anderson insulator in Ti-doped 1 T -TaS 2

Interplay of Broken Symmetry and Delocalized Excitations in the Insulating State of 1T-Tas2

Photoelectric and Magnetic Variation of Transition Metal-Doped Monolayer TiS2: A First-Principles Calculation

Structural, Elastic and Electronic Properties of A New Ternary-Layered Ti2sin

Quantum Transport Characteristics of Lateral pn-Junction of Single Layer TiS3