Forward Bias Voltage Controlled Infrared Photodetection and Electroluminescence from a P-I-n Quantum Dot Structure

Kai Cui,Wenquan Ma,Yanhua Zhang,Jianliang Huang,Yang Wei,Yulian Cao,Zhao Jin,Lifeng Bian
DOI: https://doi.org/10.1063/1.3607308
IF: 4
2011-01-01
Applied Physics Letters
Abstract:We report a specially designed p-i-n quantum dot (QD) device in which both the intersubband and the interband transitions of the QD are controlled by the applied forward bias voltage. The design is achieved by using asymmetric AlGaAs barriers on both sides of only one QD layer and by placing two-dimensional electron gas structure on one side of the QD layer. Experimentally, at 77 K, the device can detect normal incidence infrared light of about 5.6 µm when the forward bias voltage is in between about 3 and 7 V, while it emits electroluminescence of about 1 μm when the applied forward bias voltage is larger than 11 V.
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