A transport-kinetic model development for polysilicon chemical vapor deposition in a SiHCl3–H2 system
Dan Zhao,Qi Zhang,Fengyang Chen,Xingping Yuan,Ni Yang,Gang Xie,Jianguo Wang,Yanqing Hou,Bo Yang
DOI: https://doi.org/10.1016/j.ijthermalsci.2024.108944
IF: 4.779
2024-05-01
International Journal of Thermal Sciences
Abstract:For the Siemens process, the most common technique for producing polysilicon, the Siemens chemical vapor deposition (CVD) reactor is the principal instrument. To better understand how the complex chemical reactions and transport phenomena occurring in the reactor are coupled, it is crucial to examine the structure and operating parameters of the Siemens CVD reactor. Herein, a transport-kinetics model was developed considering the fluid dynamics, heat and mass transfer, and reaction kinetics in an industrial Siemens reactor with 24 pairs of rods. A dimensionless parameter, K TR, was used in the model to represent transport phenomena or surface chemical reactions as rate-limiting processes. By considering the reverse chemical reaction, a modified chemical reaction kinetics model was used to evaluate surface reactions on the rods in the reactor. To validate the newly developed model, the calculated results were compared with experimental data reported in the literature; the results showed a relative error of 3.6 % with a maximum relative error of 4.8 %.
engineering, mechanical,thermodynamics