Abstract:Nominally phase-pure $\gamma$-$Ga_2O_3$ was deposited on (100) $MgAl_2O_4$ within a narrow temperature window centered at $\sim$470 $^{\circ}$C using metal-organic chemical vapor deposition (MOCVD). The film deposited at 440 $^{\circ}$C exhibited either poor crystallization or an amorphous structure; the film grown at 500 $^{\circ}$C contained both $\beta$-$Ga_2O_3$ and $\gamma$-$Ga_2O_3$. A nominally phase-pure $\beta$-$Ga_2O_3$ film was obtained at 530 $^{\circ}$C. Atomic-resolution scanning transmission electron microscopy (STEM) investigations of the $\gamma$-$Ga_2O_3$ film grown at 470 $^{\circ}$C revealed a high density of antiphase boundaries. A planar defect model developed for $\gamma$-$Al_2O_3$ was extended to explain the stacking sequences of the Ga sublattice observed in the STEM images of $\gamma$-$Ga_2O_3$. The presence of the 180$^{\circ}$ rotational domains and 90$^{\circ}$ rotational domains of $\beta$-$Ga_2O_3$ inclusions within the $\gamma$-$Ga_2O_3$ matrix is discussed within the context of a comprehensive investigation of the epitaxial relationship between those two phases in the as-grown film at 470 $^{\circ}$C and the same film annealed at 600 $^{\circ}$C. The results led to the hypotheses that (i) incorporation of certain dopants including Si, Ge, Sn, Mg, Al, and Sc, into $\beta$-$Ga_2O_3$, locally stabilizes the "$\gamma$-phase" and (ii) the site preference(s) for these dopants promotes the formation of the "$\gamma$-phase" and/or $\gamma$-$Ga_2O_3$ solid solutions. However, in the absence of such dopants, pure $\gamma$-$Ga_2O_3$ remains the least stable $Ga_2O_3$ polymorph, as indicated by its very narrow growth window, lower growth temperatures relative to other $Ga_2O_3$ polymorphs, and the largest calculated difference in Helmholtz free energy per formula unit between $\gamma$-$Ga_2O_3$ and $\beta$-$Ga_2O_3$ than all other polymorphs.

Atomistic structure and energetics of interface between Mn-doped γ-Ga 2 O 3 and MgAl 2 O 4

Atomistic Structure And Energetics Of Interface Between Mn-Doped Gamma-Ga2o3 And Mgal2o4

Ag (1 0 0)/mgo (1 0 0) Interface: A Van Der Waals Density Functional Study

Al Coordination and Ga Interstitial Stability in a β-(Al0.2Ga0.8)2O3 Thin Film

Structural, chemical and electronic properties of the Co2MnSi(001)/MgO interface

Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3

Microstructure and Interface Control of Gan/Mgal2o4 Grown by Metalorganic Chemical Vapor Deposition: Substrate-Orientation Dependence

Investigation on Mn$_{3-δ}$Ga/MgO interface for magnetic tunneling junctions

Microstructure Of Mn-Doped Gamma-Ga2o3 Epitaxial Film On Sapphire (0001) With Room Temperature Ferromagnetism

First-Principles Study of Mg(0001)/Mgo(1-11) Interfaces

Structural and Electronic Properties of BaO/MgO(001)-type Interface Studied Via Aberration-corrected Transmission Electron Microscopy and First-principles Calculations

First-principles Study of Mg/Al 2 MgC 2 Heterogeneous Nucleation Interfaces

The Structure of the Interface Between BaTiO3 Thin Films and MgO Substrates

First-Principles Calculations on Mg/Al4c3 Interfaces

Atomic-scale investigation of $γ$-Ga$_2$O$_3$ deposited on MgAl$_2$O$_4$ and its relationship with $β$-Ga$_2$O$_3$

Engineering Mn3Ga/GaAs interfaces: a first-principles study on energetic stability and magnetic anisotropy

Epitaxial growth of Mn-doped γ-Ga 2 O 3 on spinel substrate

The Interfaces of Γ''/Β' and Γ'' Internal Phases in Mg-Gd-Ag Alloys

First-principles Study of Structural Stability and Electronic Properties of Polar MgAl2O4/Al Interface

An Ab Initio Study of MgO Epitaxial Layers on a Co2MnSi (0 0 1) Surface: Influence of the Interface Structure on Tunnelling Conductance

Structure evolution of hcp/ccp metal oxide interfaces in solid-state reactions