Abstract:A new dual-band low-noise amplifier (LNA) operating at L1/E1 1.575 GHz and L5/E5 1.192 GHz center frequencies for global navigation satellite system receivers is proposed. A doubled common-source amplifier architecture is used with a single input, shared gate inductor, and two outputs to split the RF signal into separate RX channels. The main advantage of the proposed circuit is compatibility with widespread multi-band antennas with single RF connectors dedicated to high-precision applications, as well as the possibility to use cheap SAW filters with small footprints to build low-cost, highly accurate GNSS receiver modules. The input and both outputs are well matched to 50 Ω impedance. The LNA is designed with a 110 nm CMOS process, consuming 6.13 mA current from a 1.5 V supply. The measured noise figures and voltage gains of the dual-band LNA are, respectively, NF1/NF5 = 3.23/3.5 dB and G1/G5 = 21.22/18.2 dB in the band of interest for each channel. The measured impedance matching at the input (S11) and output (S22) of the dual-band low-frequency amplifier is as follows: S11_L1 = −23.89, S11_L5 = −8.42, S22_L1 = −12.65, S22_L5 = −15.08. The one-decibel compression points are L1 band PdB1 = −37.71 dBm and L5 band PdB5 = −34.72 dBm, respectively.

A low-noise amplifier using subthreshold operation for GPS-L1 RF receiver

A Sub-GHz Low-Power Receiver Employing Resistive-Feedback-Tuned LNA with 2.1-Db NF and 106-Db Gain Tuning Range

A Sub-GHz CMOS Low-IF Receiver for Lot Applications

Low noise amplifier module with active bias using system in package technology

A Compact 2.1–39 GHz Self-Biased Low-Noise Amplifier in 65 Nm CMOS Technology

A 0.061-Mm² 1–11-Ghz Noise-Canceling Low-Noise Amplifier Employing Active Feedforward with Simultaneous Current and Noise Reduction

3-10 GHz self-biased resistive-feedback lna with inductive source degeneration

A Highly Linear 2.4GHz Low Noise Amplifier

A low power single ended input differential output low noise amplifier for L1/L2 band

Analysis and Design of Ultra-Wideband Low-Noise Amplifier with Input/Output Bandwidth Optimization and Single-Ended/Differential-Input Reconfigurability.

Ultralow Power E-Band Low-Noise Amplifier with Three-Stacked Current-Sharing Amplification Stages in 28-Nm CMOS

Gain-controlled CMOS Low Noise Amplifier

A Wideband Inductorless LNA with Local Feedback and Noise Cancelling for Low-Power Low-Voltage Applications

A 23-30 GHz LNA with Noise-Cancelling in 28nm CMOS

A 1.0–5.0ghz Tunable LNA with Automatic Frequency Calibration in 65 Nm CMOS

Dual-Band Low-Noise Amplifier for GNSS Applications

Inductorless CMOS Low Noise Amplifier for Multiband Application in 0.1–1.2 GHz

A 0.9V 0.1-4Ghz LNTA in 28-Nm CMOS Achieving +11.3dbm IIP3 with Self-loaded Linearization Technique.

A dual band CMOS two-stage variable gain low noise amplifier

A 0.0081mm2 0.15–5.9-Ghz Low Noise Amplifier with Noise Cancelling and Current Reuse Techniques

Design of a Low Power CMOS Low Noise Amplifier