Abstract:Si$_{y}$Ge$_{1-x-y}$(C,Sn,Pb)$_{x}$ alloys have attracted significant attention as a route to achieve a direct-gap group-IV semiconductor. Using density functional theory (DFT) - employing local density approximation and hybrid Heyd-Scuzeria-Ernzerhof exchange-correlation functionals - we compute the lattice parameters, relaxed and inner elastic constants, and internal strain (Kleinman) parameters for elemental (diamond) group-IV materials and zinc blende IV-IV compounds. Our DFT calculations support a little-known experimental re-evaluation of the $\alpha$-Sn elastic constants, and contradict a recent prediction of dynamic instability in selected IV-IV compounds. DFT-calculated structural and elastic properties are used in conjunction with a recently derived analytical parametrisation of a harmonic valence force field (VFF) [Phys. Rev. B 100, 094112 (2019)] to obtain a complete set of VFF potentials for Si$_{y}$Ge$_{1-x-y}$(C,Sn,Pb)$_{x}$ and Si$_{x}$Ge$_{1-x}$ alloys. The analytical parametrisation exactly reproduces the relaxed elastic constants and Kleinman parameter without recourse to numerical fitting, allowing for accurate and computationally inexpensive lattice relaxation. The accuracy of the VFF potentials is demonstrated via comparison to the results of DFT supercell relaxation for (i) ordered Si (Ge) alloy supercells containing a substitutional C, Ge (Si), Sn or Pb impurity, where comparison is also made to a model analytical VFF, and (ii) disordered Si$_{x}$Ge$_{1-x}$ alloy supercells. The VFF potentials we present enable accurate and computationally inexpensive relaxation of large-scale supercells representing bulk-like group-IV alloys or group-IV heterostructures, providing input to first principles or empirical electronic structure calculations, and enabling structural analysis and calculation of strain fields in heterostructures for device applications.

The stability and the nonlinear elasticity of 2D hexagonal structures of Si and Ge from first-principles calculations

Metastable C-centered Orthorhombic Si8and Ge8

Equation of State, Nonlinear Elastic Response, and Anharmonic Properties of Diamond-Cubic Silicon and Germanium: First-Principles Investigation

Nonlinear Elasticities of Octagonal and Dodecagonal Quasicrystals

First-Principles Study of Monolayer and Bilayer Honeycomb Structures of Group-Iv Elements and Their Binary Compounds

Mechanical Stabilities and Nonlinear Properties of Monolayer Gallium Selenide under Tension

Structural, Vibrational and Electronic Properties of Single Layer Hexagonal Crystals of Groups IV and V

Monolayer honeycomb structures of group IV elements and III-V binary compounds

Mechanical and Lattice Thermal Properties of Si-Ge Lateral Heterostructures

New stable two dimensional silicon carbide nanosheets

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

Accurate electronic and optical properties of hexagonal germanium for optoelectronic applications

Two-Dimensional Si-Ge Monolayers: Stabilities, Structures and Electronic Properties

Fully analytic valence force fields for the relaxation of group-IV semiconductor alloys: elastic properties of group-IV materials calculated from first principles

Fifth-degree elastic energy for predictive continuum stress–strain relations and elastic instabilities under large strain and complex loading in silicon

Ensemble averages of ab initio optical, transport, and thermoelectric properties of hexagonal Si$_x$Ge$_{1-x}$ alloys

Nonlinear Elastic Behavior of Two-Dimensional Molybdenum Disulfide

Theoretical studies of elastic and thermodynamic properties of cubic B20 CoSi

First-Principles Analysis of Vibrational Properties of Type II SiGe Alloy Clathrates

Vibrational properties of Si/Ge superlattices

Structural Stability and Anisotropic Stress of Ge/Si(113)-2*2 Surface