Abstract:With the development of complementary metal-oxide semiconductor (CMOS) technology, the feature size of mental-oxide-semiconductor field-effect-transistor (MOSFET) is continuously shrunk, the short channel effect becomes more and more serious, which makes the static power consumption increase, and now the static power consumption becomes a main source of the power consumption of the integrated circuits. Currently, the performance of CMOS binary logic processor is approaching a bottleneck; therefore the ternary logic becomes a research hotspot to promote the development of high-performance low-power integrated circuits. Compared with binary logic, ternary logic possesses a strong data expression capability, which can not only improve the data density, but also reduce the circuit power consumption and the system complexity. However, using binary devices to build ternary logic circuits requires a large number of components, and even the passive components, which makes it impossible to leverage the advantages of ternary logic. The other method of implementing ternary logic is to utilize innovative two-dimensional materials. This method requires a small number of components and obviates the need for passive components, but it faces the problem that the fabrication process is not mature and cannot be mass-produced. To solve these problems, in this paper by combining the tunneling and the drift diffusion mechanism, we propose a tunneling metal-oxide-semiconductor field-effect transistor (TMOSFET) with three-state characteristics that make it highly suitable for ternary logic design. Compared with other ternary logic schemes, the ternary inverter based on TMOSFET has the same circuit structure as binary inverter, which can simplify the circuit design. In this paper, the operational mechanism of this ternary inverter is studied, and the condition of three-state output of inverter is analyzed. It is found that when the operating voltage VDD and the device turning voltage Vturn satisfy VDD/Vturn approximate to 1.4, the input voltage ranges of the three output states are equivalent. In addition, the influence of TMOSFET transfer characteristic on this ternary inverter is also analyzed. This has certain reference significance for designing and studying ternary logic circuits in future.

Design of Ternary Adiabatic Counter on Switch-Level

Design of Adiabatic Timer Based on Three Essential Circuit Elements for Adiabatic Circuits

Design of Adiabatic FIFO Based on Clocked Transmission Gate Adiabatic Logic Circuit

High-Performance Current-Mode Logic Ternary D Flip-Flop Based on Bipolar Complementary Metal Oxide Semiconductor

Five-valued Counter Based on Three Essential Circuit Elements

A Novel TMOSFET Ternary Inverter Based on Hybrid Conduction Mechanism

Research on low power technology based on Multi Bit Flip Flop

A 2ghz Programmable Counter with New Re-Loadable D Flip-Flop

Design of Low-Voltage Low-Power Ternary TTL Circuits based on the technique of low threshold voltage

Design and Implementation of Ternary Logic Integrated Circuits by Using Novel Two-Dimensional Materials

Design of Low-Power Dynamic Ternary CMOS D Flip-Flop

Design of Ternary Clock Generator

Implementation and Applications of a Ternary Threshold Logic Gate

Ternary combinational logic gate design based on tri-valued memristors

Design of ternary D-type flip-flop based on clock-gating technique

Design of Low Power Multivalued Double-Edge-triggered Flip-Flop

Design an energy efficient pulse triggered ternary flip flops with Pseudo NCFET logic

Design methodology of ternary logic circuit on resonant tunneling diode

A Novel High-Performance Tunneling Field-Effect Transistor Ternary Inverter

Design of a Ternary Logic Processor Using CNTFET Technology

Design of ternary pulsed JKL flip-flops