The Theoretical and Numerical Models of a Novel Multi-Wavelength Source Using a Semiconductor Ring Laser

Jiangbo Zhu,Junwen Zhang,Nan Chi,Siyuan Yu

2011-01-01

Abstract:A novel concept of multi-wavelength source is presented. We have simulated the performance by numerically solving the multimode rate equations of the system. 7 carriers are obtained, with flatness less than 5 dB.

What problem does this paper attempt to address?

The Theoretical and Numerical Models of the Novel and Fast Tunable Semiconductor Ring Laser

Jiangbo Zhu,Junwen Zhang,Nan Chi,Siyuan Yu

DOI: https://doi.org/10.1117/12.888627

2010-01-01

Abstract:We derived the multimode rate equations corresponding to the practical tunable semiconductor ring laser. We did MatLab simulation to research the process of mode competition and wavelength switching in the laser. A SMSR exceeding 30 dB was measured. Finally some discussion of the influence of several key parameters was given.
Modeling of a diode transverse-pumped cesium vapor laser

Jing Yang,Yanan Yang,Jingbo Luo,Bailiang Pan

DOI: https://doi.org/10.1007/s00340-013-5638-4

2013-01-01

Applied Physics B

Abstract:A physical model is established to demonstrate the mechanism and the kinetic process of a diode transverse-pumped cesium vapor laser. The distribution of pump laser power is described, and the effects of parameters such as the temperature, the cell length and the output coupler reflectivity on the output performance of a cesium vapor laser are simulated and analyzed. The simulation results agree well with the experiment data which shows the validity of this model. A set of optimization parameters is achieved for improving the output characteristics of a diode transverse-pumped Cs vapor laser.
Numerical Simulations on a Nanosecond-Pulse Exciplex Pumped Cesium Vapor Laser

Chenyi Su,Xingqi Xu,Jinghua Huang,Bailiang Pan

DOI: https://doi.org/10.1364/oe.398615

IF: 3.8

2020-01-01

Optics Express

Abstract:A theoretical model is established to describe the kinetic processes and laser mechanism for a nanosecond-pulse exciplex pumped Cs vapor laser (XPCsL). A new simulation method is proposed to solve a set of non-stationary rate equations considering high energy levels and the results of simulation are consistent with the experimental data. The effects of cell temperature, pump energy and buffer gas on the output laser pulses are presented and analyzed in detail, which reveal the unique properties of nanosecond-pulse XPCsL.
Theoretical Modelling of Single-Mode Lasing in Microcavity Lasers Via Optical Interference Injection.

Ling-Fang Wang,Yun-Ran Wang,Henry Francis,Ri Lu,Ming-Jun Xia,Feng Liu,Mark Hopkinson,Chao-Yuan Jin

DOI: https://doi.org/10.1364/oe.389860

IF: 3.8

2020-01-01

Optics Express

Abstract:The effective manipulation of mode oscillation and competition is of fundamental importance for controlling light emission in semiconductor lasers. Here we develop a rate equation model which considers the spatially modulated gain and spontaneous emission, which are inherently governed by the ripple of the vacuum electromagnetic field in a Fabry-Pérot (FP) microcavity. By manipulating the interplay between the spatial oscillation of the vacuum field and external optical injection via dual-beam laser interference, single longitudinal mode operation is observed in a FP-type microcavity with a side mode suppression ratio exceeding 40 dB. An exploration of this extended rate equation model bridges the gap between the classical model of multimode competition in semiconductor lasers and a quantum-optics understanding of radiative processes in microcavities.
Modulation Properties of Multi Quantum Wells Laser Analyzed by A Three-Level Model in Spice

X Zhao,XL Kang,NX Song,MH Wang

DOI: https://doi.org/10.1117/12.402720

2001-01-01

Chinese Journal of Lasers

Abstract:Without accurate models of the modulation behavior of multi quantum wells (MQW) lasers, it would be impossible to construct simulation circuits that include the models, the driver circuits and so on. A study of equivalent circuit model of MQW lasers derived from three-level rate equations has been carried out. It can explain the carrier distribution, which can not be explained by traditional two-level model. Then the simulation of modulation behavior has been implemented in SPICE. Results of various modulation properties from the simulator have been discussed. Especially, the scheme was implemented in a hierarchic way, which means a much easier management And this hierarchic way help to realize photonic design automation (PDA).
Effects of the Spatial Nonuniformity of Optical Transverse Modes on the Modulation Response of Vertical-Cavity Surface-Emitting Lasers

Y Liu,WC Ng,B Klein,K Hess

DOI: https://doi.org/10.1109/jqe.2002.806205

IF: 2.5

2003-01-01

IEEE Journal of Quantum Electronics

Abstract:We present detailed numerical simulations to clarify the important role that the nonuniformity of the transverse optical mode plays for the high-speed response of oxide-confined vertical-cavity surface-emitting lasers (VCSELs). The comprehensive laser diode simulator, Minilase, as well as a one-dimensional rate equation model are used as simulation tools. It is demonstrated that, due to the nonuniform optical intensity, carriers at different locations in the quantum well have different stimulated recombination rates, and therefore exhibit different dynamic responses to small signal modulation. This nonuniformity causes an overdamping of the relaxation oscillation, as well as a low-frequency roll-off of the modulation response. Due to this nonlinear effect, the intrinsic maximum bandwidth of VCSELs with oxide confined apertures is shown to be much smaller than predicted by the conventional rate equation model which assumes uniform optical intensity. We further demonstrate that this damping effect can be greatly reduced by restricting the current injection to be well within the transverse optical field. This is achievable by using tapered oxides to make the electrical aperture smaller than the optical aperture, and thereby improves the modulation bandwidth significantly.
Novel Semiconductor Lasers and Integrated Photonic Devices

Jian-Jun He,Jialiang Jin,Dekun Liu,Lei Jin,Min Lou,Tingting Yu,Lei Wang

DOI: https://doi.org/10.1117/12.873899

2010-01-01

Abstract:Novel design concepts, simulations and experimental results on semiconductor lasers and integrated photonic devices are presented, for both telecom and biomedical applications. It is shown that the Vernier effect can be used to increase the tuning range of a digitally wavelength-switchable semiconductor laser, and to increase the sensitivity of passive and active waveguide sensors. The wavelength switchable laser based on V-coupled cavity has a large tolerance on the accuracy of the setting current. For the middle 50% of the current range corresponding to a wavelength channel, the wavelength varies by only ±0.01nm from the set value for 0.8nm channel spacing and the SMSR is maintained above 38dB. Wavelength switching over 8 consecutive channels is experimentally demonstrated using a single electrode control. The wavelength shift sensitivity of a waveguide sensor based on two cascaded microring resonators with Vernier effect can reach 1300nm/RIU, over an order of magnitude higher than a single ring sensor. A monolithic integrated intracavity biosensor based on V-coupled cavity laser is also proposed and analyzed. By simply detecting the power ratio of two output ports, a refractive index sensitivity in the order of 10-8 RIU can be achieved thanks to the intracavity sensing mechanism and the Vernier effect.
Widely Tunable Semiconductor Laser Based on Double Half-Wave-Coupled Rectangular Ring Resonators

Lin Wu,Zhipeng Hu,Jian-Jun Meng,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2013.af1b.2

2013-01-01

Abstract:A widely tunable semiconductor laser based on double half-wave-coupled rectangular ring resonators is designed and simulated. By employing the Vernier effect between the rectangular ring resonators, a large tuning range of 40nm is achieved, while the corresponding threshold gain difference and the SMSR is 4.5cm−1 and 46dB, respectively.
Modeling of Widely Tunable V-cavity Semiconductor Laser Using Time-Domain Traveling-Wave Method

Lin Wu,Jian-Jun He,Dominic Gallagher

DOI: https://doi.org/10.1364/josab.32.000309

2015-01-01

Journal of the Optical Society of America B

Abstract:We investigate the static and dynamic characteristics of the widely tunable V-cavity semiconductor laser using the time-domain traveling-wave method. The theoretical model is presented. The simulation results are compared with experimental data for an all-active V-cavity laser, and good agreements are obtained. To improve the device performance, a new device structure with passive tuning waveguides is designed. The numerical results show that 21 channels can be achieved by single electrode tuning using carrier injection effect with two cavities of 420 and 440 mu m long. Dynamic wavelength switching between different channels is simulated. Mode competition is observed during the transient and the switching delay time varies from 3 to 18.5 ns for different switching paths. A simple algorithm for quasi-continuous tuning is developed for the first time by varying the injection currents on the channel selector electrode and the fine-tuning electrode synchronously. A quasi-continuous tuning of 16.8 nm is achieved with a current variation of less than 20 mA on each electrode. For direct modulation characteristics, small signal response simulation is carried out by an impulse current injection with a fast Fourier transform algorithm, and a 3 dB bandwidth of 7 GHz is obtained when biased at 100 mA. Moreover, 2.5 and 10 Gb/s direct intensity modulation are also demonstrated. The simulation results show great potential for the compact and low-cost tunable laser to be used for wavelength-agile access and data center networks, as well as biomedical applications. (C) 2015 Optical Society of America
Rate Equation Analysis of High Speed Q-Modulated Semiconductor Laser

Dekun Liu,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1109/jlt.2010.2077671

IF: 4.7

2010-01-01

Journal of Lightwave Technology

Abstract:Dynamic response of a Q-modulated semiconductor laser is simulated based on a rate equation model. Numerical results from both small-signal and large-signal analyses show that the Q-modulation has much higher bandwidth limit and smaller wavelength chirp than the direct modulation. It is shown that a high-extinction-ratio, low-chirp modulation of 40 GHz RZ signal can be achieved and the effects of various parameters on the Q-modulation are discussed. In addition to high-speed communications, the Q-modulated laser is particularly suitable for microwave carrier generation in radio-over-fiber systems.
Mode Competition Analysis in Dual-Wavelength Coupled-Cavity Semiconductor Laser

Zhenyang Gao,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1364/josab.27.000432

2010-01-01

Abstract:The mode competition in a dual-wavelength quarter-wave coupled-cavity semiconductor laser is analyzed using Langevin noise-driven rate equations. The laser can achieve simultaneous emission of two optical modes as a doublet with the same threshold, while the frequency difference of the two lasing wavelengths can be tuned by the injection currents. The analytical expressions for the spectral positions of the doublet and the threshold gain are derived, and a numerical model based on Langevin noise-driven rate equations is established for the mode competition process with enhanced physical insight. (C) 2010 Optical Society of America
Numerical Simulation of Dicke Superradiance in a Semiconductor Laser Device

X. Guo,K. A. Williams,V. F. Olle,A. Wonfor,R. V. Penty,I. H. White

DOI: https://doi.org/10.1364/iprsn.2011.iwa3

IF: 13.582

2011-01-01

Advanced Photonics

Abstract:This paper reports a theoretical model for Dicke Superradiance in semiconductor laser devices. Simulations agree well with previously-observed superradiance properties and are used to optimize driving conditions and device geometry.
Rate‐equation‐based Circuit Model of High‐speed Semiconductor Lasers

S. J. Zhang,N. H. Zhu,E. Y. B. Pun,P. S. Chung

DOI: https://doi.org/10.1002/mop.22180

IF: 1.311

2007-01-01

Microwave and Optical Technology Letters

Abstract:Based on rate equations of semiconductor laser, a symbolically‐defined model for optical transmission system performance evaluation and network characterization in both time‐ and frequency‐domains is presented. The steady‐state and small‐signal characteristics, such as current–photon density curve, current–voltage curve, and input impedance, can be predicted from this model. Two important dynamic characteristics, second‐order harmonic distortion and two‐tone third‐order intermodulation products, are evaluated under different driving conditions. Experiments show that the simulated results agree well with the published data. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 539–542, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22180
Simulation And Design Of Monolithically Integrated Tunable Wavelength Converter Based On V-Cavity Laser And Delayed Mach-Zehnder Interferometer

Yingchen Wu,Jian-Jun He

2014-01-01

Abstract:In this paper, we present the design and simulation results of a much simpler monolithically integrated wavelength converter based on a V-cavity laser (VCL) and delayed Mach-Zehnder interferometer (DMZI) with semiconductor optical amplifiers (SOAs). The dynamic characteristics of the wavelength converter are investigated using the large-signal dynamic model of semiconductor optical amplifier (SOA) with time-dependent transfer matrix method (TD-TMM). A 10 Gb/s return-to-zero (RZ) tunable all-optical wavelength converter is achieved with a large extinction ratio for both frequency up and down conversions.
Modeling of Widely Tunable Double-Ring-Resonator Coupled Semiconductor Laser

黄晓东 huang xiaodong,周宁 zhou ning,刘文 liu wen,赵建宜 zhao jianyi

DOI: https://doi.org/10.3788/aos201232.0214003

2012-01-01

Acta Optica Sinica

Abstract:A relatively simple model is developed to simulate the widely tunable double-ring resonator lasers.In the simulation,the active region of the device is modeled using conventional time domain traveling method,because when the tuning range is large than 40 nm,the gain shape should be considered.The passive parts are first modeled by frequency domain method and then transformed into time domain via digital filter.The simulation result shows that the coupling coefficient has a significant effect on large signal modulation.With low coupling coefficient the laser can get narrow linewidth but poor modulation performance.Finally,the switching characteristics such as switching delay and multi-mode competition are also investigated.The result shows that the laser can switch the wavelength with high speed and large range.
Compact Circuit Modeling of Semiconductor Lasers for Analog Optical Link Simulations

S. J. Zhang,N. H. Zhu,Y. Liu

DOI: https://doi.org/10.1117/12.755713

2007-01-01

Abstract:Accurate and rapid analyses and simulation of semiconductor laser performance, such as small-signal modulation bandwidth, dynamic impedance and large-signal nonlinear distortion etc., are required for the optimal design of an optical communication system. In this paper, by introducing a novel normalized transformation for rate equations of semiconductor lasers, a compact rate-equation-based circuit model is presented and implemented in Agilent's advanced design system. Furthermore, the model is enhanced by including the current-voltage characteristics, and can be directly cascaded with extrinsic parasitic circuits for circuit- or system-level simulation. Thus, the model is applicable for optical transmission system performance evaluation and network characterization in both time and frequency domains.The steady-state and small-signal characteristics, such as current-photon density curve, current-voltage curve and input impedance, are predicted by this model. Two important dynamic characteristics of second-order harmonic distortion and two-tone third-order intermodulation products are simulated under different driving conditions. Fundamental sinusoidal signals at 1 GHz and 2GHz with peak-to-peak modulation current of 11.2mA and 18mA are used to investigate second-order harmonic distortion of semiconductor lasers. For the two-tone third-order intermodulation, two equal-amplitude sinusoidal signals at 4 GHz and 4.04 GHz, each with peak-to-peak modulation current of 11.2 mA, are used to examine the products at 3.96 and 4.08 GHz. The simulated results are compared to the published measurements results. Experiments show that the measured results agree well with the published data.
A Novel L-band Multiwavelength Erbium-Doped Fiber Ring Laser

YF Zhang,Y Yao,Q Wang

DOI: https://doi.org/10.1117/12.575832

2005-01-01

Abstract:A novel L-band multi-wavelength erbium-doped fibre ring laser was proposed and studied by numerical method. The numerical model was developed based on a C-band EDFA and the propagation and rate equations of homogeneous broaden in two levels medium. In this L-band model, the excited state absorption was included during computing. The flat multi-wavelength laser in L-band was achieved by lengthening the erbium-doped fibre, and utilizing detrimental backward amplified spontaneous emission as a secondary pump power. The laser emitting spectral region was shifted, to prevent the mode competing at room temperature. This kind of laser can be useful in a wavelength division multiplexing transmission (WDM) system.
A numerical model for semiconductor laser diodes

Dezhi Xing,Wenzhe Wang,Xiaoli Jin,Jing Su,Hongxia Liu

DOI: https://doi.org/10.1109/SOPO.2012.6271033

2012-01-01

Abstract:A numerical model for semiconductor laser diodes that predicts laser performance in high speed optical interconnect applications has been developed. The model is based on the temporal numerical simulation of the rate equation for semiconductor laser diodes. The popular math package MATLAB has been used to simulate the dynamic behavior of carrier and photon density. The term turn on delay time is defined to describe the different response of carrier and photon when injection current is applied. The results under constant and varying injection current are also analyzed in detail. © 2012 IEEE.
Double Half-Wave-Coupled Rectangular Ring-Fp Laser With 35x100ghz Wavelength Tuning

Lin Wu,Xiaolu Liao,Zhipeng Hu,Jian-Jun He

DOI: https://doi.org/10.1109/LPT.2015.2406709

IF: 2.6

2015-01-01

IEEE Photonics Technology Letters

Abstract:A widely wavelength tunable semiconductor laser based on two cascaded half-wave-coupled rectangular ring resonators is demonstrated. Vernier effect between two rectangular rings with perimeter of 281 and 305 mu m is employed to enlarge the tuning range. Simple fabrication process is used with all active waveguides. No epitaxial regrowth, grating, or high-resolution lithography is needed. By adjusting the injection currents applied to the cascaded rectangular rings synchronously, wavelength tuning of 35 channels with 100 GHz spacing is achieved with side mode suppression ratio up to 40.5 dB.
The Numerical Analysis of A Broadly Tunable Ytterbium-Doped Fiber Ring Laser

AT Wang,J Huang,XJ Lv,F Li,L Lv,HQ Gui,GH Yuan,H Ming,JP Xie

DOI: https://doi.org/10.1117/12.573066

2005-01-01

Abstract:We present a novel numerical model for an ytterbium-doped fiber ring laser. A comprehensive numerical model based on an iterative solution of propagation rate equations is used to analyze the impact of various laser variables. The dependence of laser output power on pump power, ytterbium-doped fiber (YDF) length, and emission wavelength has been investigated, with the aim to optimize laser parameters with respect to emission wavelength and output power. Close to emission wavelength, the optical signal-to-noise ratio is higher than 65 dB. We also investigate that the initial oscillation is damped oscillation, and the laser output become steady-state output one millisecond later.

The Theoretical and Numerical Models of a Novel Multi-Wavelength Source Using a Semiconductor Ring Laser

The Theoretical and Numerical Models of the Novel and Fast Tunable Semiconductor Ring Laser

Modeling of a diode transverse-pumped cesium vapor laser

Numerical Simulations on a Nanosecond-Pulse Exciplex Pumped Cesium Vapor Laser

Theoretical Modelling of Single-Mode Lasing in Microcavity Lasers Via Optical Interference Injection.

Modulation Properties of Multi Quantum Wells Laser Analyzed by A Three-Level Model in Spice

Effects of the Spatial Nonuniformity of Optical Transverse Modes on the Modulation Response of Vertical-Cavity Surface-Emitting Lasers

Novel Semiconductor Lasers and Integrated Photonic Devices

Widely Tunable Semiconductor Laser Based on Double Half-Wave-Coupled Rectangular Ring Resonators

Modeling of Widely Tunable V-cavity Semiconductor Laser Using Time-Domain Traveling-Wave Method

Rate Equation Analysis of High Speed Q-Modulated Semiconductor Laser

Mode Competition Analysis in Dual-Wavelength Coupled-Cavity Semiconductor Laser

Numerical Simulation of Dicke Superradiance in a Semiconductor Laser Device

Rate‐equation‐based Circuit Model of High‐speed Semiconductor Lasers

Simulation And Design Of Monolithically Integrated Tunable Wavelength Converter Based On V-Cavity Laser And Delayed Mach-Zehnder Interferometer

Modeling of Widely Tunable Double-Ring-Resonator Coupled Semiconductor Laser

Compact Circuit Modeling of Semiconductor Lasers for Analog Optical Link Simulations

A Novel L-band Multiwavelength Erbium-Doped Fiber Ring Laser

A numerical model for semiconductor laser diodes

Double Half-Wave-Coupled Rectangular Ring-Fp Laser With 35x100ghz Wavelength Tuning

The Numerical Analysis of A Broadly Tunable Ytterbium-Doped Fiber Ring Laser